Method of fabricating GaN semiconductor structures using laser-assisted epitaxial liftoff
First Claim
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1. A method for making a nitride based resonant cavity semiconductor structure comprising the steps of:
- depositing a laser absorption layer on a transparent substrate;
depositing a plurality of III-V nitride semiconductor layers on said laser absorption layer, said plurality of III-V nitride semiconductor layers forming a resonant cavity, at least one of said plurality of III-V nitride semiconductor layers forms an active region;
depositing a first distributed Bragg reflector on said plurality of III-V nitride semiconductor layers;
attaching a support substrate to said first distributed Bragg reflector;
removing said transparent substrate and said laser absorption layer from said plurality of III-V nitride semiconductor layers;
depositing a second distributed Bragg reflector on said plurality of III-V nitride semiconductor layers, opposite said first distributed Bragg reflector;
etching said plurality of III-V nitride semiconductor layers to expose two contact layers; and
forming electrodes on said two contact layers to bias said active region.
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Abstract
A method is provided for fabricating a nitride based resonant cavity semiconductor structure with a first distributed Bragg reflector on a sapphire substrate, a second substrate bonded to the first distributed Bragg reflector, the sapphire substrate removed by laser-assisted epitaxial lift-off, and fabricating a second Bragg reflector on the semiconductor structure opposite the first distributed Bragg reflector. The nitride based resonant cavity semiconductor structure can be a VCSEL, LED or photodetector, or a combination of said devices.
262 Citations
15 Claims
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1. A method for making a nitride based resonant cavity semiconductor structure comprising the steps of:
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depositing a laser absorption layer on a transparent substrate;
depositing a plurality of III-V nitride semiconductor layers on said laser absorption layer, said plurality of III-V nitride semiconductor layers forming a resonant cavity, at least one of said plurality of III-V nitride semiconductor layers forms an active region;
depositing a first distributed Bragg reflector on said plurality of III-V nitride semiconductor layers;
attaching a support substrate to said first distributed Bragg reflector;
removing said transparent substrate and said laser absorption layer from said plurality of III-V nitride semiconductor layers;
depositing a second distributed Bragg reflector on said plurality of III-V nitride semiconductor layers, opposite said first distributed Bragg reflector;
etching said plurality of III-V nitride semiconductor layers to expose two contact layers; and
forming electrodes on said two contact layers to bias said active region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
depositing a gallium nitride layer on said sapphire substrate, and depositing said indium gallium nitride layer on said gallium nitride layer.
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6. The method for making a nitride based resonant cavity semiconductor structure of claim 1 wherein said support substrate is silicon.
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7. The method for making a nitride based resonant cavity semiconductor structure of claim 1 wherein said support substrate is copper.
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8. The method for making a nitride based resonant cavity semiconductor structure of claim 1 further comprising the steps of:
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depositing a gold layer on said first distributed Bragg reflector; and
attaching said support substrate to said gold layer.
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9. The method for making a nitride based resonant cavity semiconductor structure of claim 1 wherein said nitride based resonant cavity semiconductor structure is a vertical cavity surface emitting laser.
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10. The method for making a nitride based resonant cavity semiconductor structure of claim 9 wherein a sufficient forward bias is applied to said active region to cause lasing from said resonant cavity through a surface of said semiconductor laser structure.
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11. The method for making a nitride based resonant cavity semiconductor structure of claim 1 wherein said nitride based resonant cavity semiconductor structure is a light emitting diode.
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12. The method for making a nitride based resonant cavity semiconductor structure of claim 11 wherein a sufficient forward bias is applied to said active region to cause light emission from said resonant cavity through a surface of said semiconductor laser structure.
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13. The method for making a nitride based resonant cavity semiconductor structure of claim 1 wherein said nitride based resonant cavity semiconductor structure is a photodetector.
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14. The method for making a nitride based resonant cavity semiconductor structure of claim 13 wherein a sufficient reverse bias is applied to said active region to cause light absorption from said resonant cavity.
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15. The method for making a nitride based resonant cavity semiconductor structure of claim 1 wherein a plurality of resonant cavities are formed, said plurality of resonant cavities being at least two of said group or vertical cavity surface emitting laser, light emitting diode and photodetector.
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