Microelectronic current regulator

• US 6,459,248 B2
• Filed: 01/29/2001
• Issued: 10/01/2002
• Est. Priority Date: 01/27/2000
• Status: Expired due to Term

• Current Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Original Assignee: Primarion Incorporated (Infineon Technologies AG)
• Inventors: Pohlman, William
• Primary Examiner(s): NGUYEN, MATTHEW VAN
• Application Number:
  US09/771,545
• Publication Number:
  US 20010033153A1
• Time in Patent Office: 610 Days
• Field of Search: 323/268, 323/270, 323/271, 323/273, 323/274, 323/275, 323/280, 323/282, 323/284, 323/285
• US Class Current: 323/282
• CPC Class Codes: G05F 1/56 using semiconductor devices in series with the load as final control devices G05F1/461 takes precedence
• CPC Class Codes: G05F 1/575 characterised by the feedback circuit

Abstract

A circuit for providing regulated power to a microelectronic device is disclosed. The circuit includes an error amplifier, a transistor, and a supplemental voltage supply coupled to the transistor. The supplemental voltage supply supplies requisite bias to operate the transistor near its saturation point.

Claims

1. A microelectronic device for producing regulated current comprising:

a transistor having a base region, a collector region, and an emitter region;

a voltage reference source coupled to said base region of said transistor;

a supplemental voltage source coupled to said base region of said transistor; and

a Schottky clamp coupled to said base and said collector of said transistor.

2. The microelectronic device for producing regulated current of claim 1, further comprising a voltage input terminal coupled to said Schottky clamp.

3. The microelectronic device for producing regulated current of claim 1, further comprising an error amplifier coupled to said base region of said transistor.

4. The microelectronic device for producing regulated current of claim 3, wherein said error amplifier comprises an output region and said error amplifier output region is coupled to said supplemental voltage source.

5. The microelectronic device for producing regulated current of claim 3, further comprising a compensation network coupled to said emitter region of said transistor.

6. The microelectronic device for producing regulated current of claim 5, wherein said compensation network is further coupled to an input of said error amplifier.

7. The microelectronic device for producing regulated current of claim 1, wherein said supplemental voltage source is configured to cause said transistor to operate near a saturation of said transistor.

8. The microelectronic device for producing regulated current of claim 1, wherein said transistor comprises an N-P-N type transistor.

9. The microelectronic device for producing regulated current of claim 1, wherein said device comprises compound semiconductor material.

10. The microelectronic device for producing regulated current of claim 9, wherein said compound semiconductor material is SiGe.

11. A microelectronic circuit comprising:

a transistor having a base region, a collector region, and an emitter region;

an input voltage source coupled to said base region and said collector region of said transistor;

a supplemental voltage source coupled to said base region of said transistor; and

an error amplifier coupled to said base region of said transistor.

12. The microelectronic circuit of claim 11, further comprising a supplemental voltage source coupled to said error amplifier.

13. The microelectronic circuit of claim 12, wherein said supplemental voltage source is configured to cause said transistor to operate near a saturation of said transistor.

14. The microelectronic circuit of claim 12, wherein said supplemental voltage source is about 3.3 volts.

15. The microelectronic circuit of claim 11, wherein said circuit comprises a compound semiconductor.

16. The microelectronic circuit of claim 15, wherein said compound semiconductor is SiGe.

17. The microelectronic circuit of claim 11, further comprising a compensation network coupled to said emitter region of said transistor and an input region of said error amplifier.