Conductive element with lateral oxidation barrier

• US 6,459,713 B2
• Filed: 04/06/2001
• Issued: 10/01/2002
• Est. Priority Date: 12/18/1995
• Status: Expired due to Term

• Current Assignee: Lumentum Operations, LLC (Lumentum Holdings Inc.)
• Original Assignee: Picolight Inc (Lumentum Holdings Inc.)
• Inventors: Jewell, Jack L.
• Primary Examiner(s): Ip, Paul
• Assistant Examiner(s): MONBLEAU, DAVIENNE N
• Application Number:
  US09/826,952
• Publication Number:
  US 20010019566A1
• Time in Patent Office: 543 Days
• Field of Search: 372/43-50
• US Class Current: 372/46.013
• CPC Class Codes: G02B 3/00 Simple or compound lenses
• CPC Class Codes: H01L 33/105 with a resonant cavity structure
• CPC Class Codes: H01S 5/0042 On wafer testing, e.g. lasers are tested before separating wafer into chips
• CPC Class Codes: H01S 5/18311 using selective oxidation
• CPC Class Codes: H01S 5/18313 by oxidizing at least one of the DBR layers
• CPC Class Codes: H01S 5/18333 only above the active layer
• CPC Class Codes: H01S 5/18341 Intra-cavity contacts
• CPC Class Codes: H01S 5/18355 having a defined polarisation
• CPC Class Codes: H01S 5/18358 containing spacer layers to adjust the phase of the light wave in the cavity
• CPC Class Codes: H01S 5/18369 based on dielectric materials
• CPC Class Codes: H01S 5/18372 by native oxidation
• CPC Class Codes: H01S 5/2059 by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
• CPC Class Codes: H01S 5/2063 obtained by particle bombardment
• CPC Class Codes: H01S 5/2068 obtained by radiation treatment or annealing
• CPC Class Codes: H01S 5/2215 using native oxidation of semiconductor layers
• CPC Class Codes: H04L 67/34 involving the movement of software or configuration parameters network booting or remote initial program loading [RIPL] G06F9/4416
• CPC Class Codes: H04L 69/329 in the application layer [OSI layer 7]

Abstract

A conductive element with a lateral oxidation barrier is provided for the control of lateral oxidation processes in semiconductor devices such as lasers, vertical cavity surface emitting lasers and light emitting diodes. The oxidation barrier is formed through modification of one or more layers which initially were receptive to oxidation. The quality of material directly below the oxidation barrier may be preserved. Related applications include the formation of vertical cavity surface emitting lasers on non-GaAs substrates and on GaAs substrates.

Claims

1. A light emitting device comprising:

a light emitting active region;

at least a first oxidizable layer located above said light emitting active region, said first oxidizable layer having a first region which is significantly oxidized and a second region which is not significantly oxidized;

top and bottom electrical contacts disposed to communicate with said second region, said top electrical contact being located above said light emitting active region and said bottom electrical contact being located below said light emitting active region;

interconnect metalization being in electrical communication with at least one of said top and bottom electrical contacts;

at least one basin disposed in said light emitting device that extends sufficiently into said light emitting device to allow access to said first region by an oxidizing agent so as to oxidize said first region;

a top mirror disposed above said light emitting active region; and

a bottom mirror disposed below said light emitting active region.

2. The light emitting device recited in claim 1, wherein said second region is surrounded by said first region, thereby forming an aperture.

3. The light emitting device recited in claim 1, wherein said light emitting device comprises a light emitting diode.

4. The light emitting device recited in claim 1, wherein said interconnect metalization is capable of connecting said light emitting device to a bonding pad.

5. The light emitting device recited in claim 4, wherein said bonding pad is a wire bonding pad.

6. The light emitting device recited in claim 1, wherein said at least one basin has a sidewall disposed proximal to at least a portion of said first region, said sidewall completely hemming said second region.

7. The light emitting device recited in claim 1, wherein said at least one basin has a sidewall disposed proximal to at least a portion of said first region, said sidewall not completely hemming said second region.

8. The light emitting device recited in claim 1, wherein said at least one basin has a sidewall disposed proximal to at least a portion of said first region, said sidewall comprising at least a segment circumflexed about said first region.

9. A light emitting device comprising:

a light emitting active region;

at least a first oxidizable layer located above said light emitting active region, said first oxidizable layer having a first region which is significantly oxidized and a second region which is not significantly oxidized;

top and bottom electrical contacts disposed to communicate with said second region, said top electrical contact being located above said light emitting active region and said bottom electrical contact being located below said light emitting active region;

interconnect metalization being in electrical communication with at least one of said top and bottom electrical contacts;

at least one basin disposed in said light emitting device that extends sufficiently into said light emitting device to allow access to said first region by an oxidizing agent so as to oxidize said first region;

a top mirror disposed above said light emitting active region; and

a bottom mirror disposed below said light emitting active region;

said top and bottom mirrors and all material between forming an optical cavity; and

means for injecting electrical current through said second region to thereby cause said light emitting device to emit a beam of light.