Circuit technique to deal with floating body effects

• US 6,466,082 B1
• Filed: 05/17/2000
• Issued: 10/15/2002
• Est. Priority Date: 05/17/2000
• Status: Expired due to Fees

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Krishnan, Srinath
• Primary Examiner(s): Callahan, Timothy P.
• Assistant Examiner(s): NGUYEN, LINH M
• Application Number:
  US09/573,036
• Time in Patent Office: 881 Days
• Field of Search: 327/535, 327/537, 327/541, 327/543, 327/309, 257/347, 257/351, 257/369, 363/142, 320/31
• US Class Current: 327/543
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688
• CPC Class Codes: H01L 29/78615 with a body contact

Abstract

A charge limiting system is provided that maintains the charge level of a body for a multiple MOSFET device structure. The multiple MOSFET device include a number of bodies linked to one another or a single body, such as a well, being employed for all devices. The single body or bodies are provided with at least one contact that extends to another layer, so that the body can be coupled to the charge limiting system. The charge limiting system includes a charge detector system that monitors the charge level on the body or bodies and a switching system for coupling the body or bodies to a fixed potential, if the charge level of the body or bodies reaches an unacceptable level. The switching system couples the body or bodies to ground for an npn type transistor and to V_DD for pnp type transistors. The charge limiting system can include a timing device, so that the body can be coupled to the fixed potential for a predetermined period of time even after the charge level of the body or bodies falls below the threshold value. This ensures that the charge level on the body is sufficiently discharged.

Claims

1. A system for limiting the charge on at least one body of at least one transistor device on an SOI MOSFET structure, the SOI MOSFET structure including a contact coupled to the at least one body, the system comprising:

charge detector system that measures the charge on the at least one body via the contact and transmits a signal in response to a charge measurement above a threshold level;

a switching system adapted to connect the at least one body via the contact to a fixed reference voltage; and

a timer device that receives the signal from the charge detector system and cause the switching system to connect the at least one body via the contact to the fixed reference voltage for a predetermined period of time to facilitate the charge level on the body being sufficiently discharged to an acceptable charge level below the threshold level to mitigate problems associated with floating body effects of the SOI MOSFET, the switching system disconnects the at least one body from the fixed reference voltage after the predetermined period of time to retain the benefits associated with floating body effects of the SOI MOSFET at the acceptable charge level.

2. The system of claim 1, the at least one transistor device being an NMOS device and the fixed reference voltage being ground.

3. The system of claim 1, the at least one transistor device being a PMOS device and the fixed reference voltage being V_DD.

4. The system of claim 1, the charge detector system being a comparator device.

5. The system of claim 4, the comparator device including a first input terminal coupleable to the contact and a second input terminal coupled to the fixed reference voltage.

6. The system of claim 1, the fixed reference voltage being provided by a voltage divider circuit.

7. The system of claim 1, the switching system further comprising a transistor device.

8. The system of claim 7, the timer device adapted to receive the signal from the charge detector system and turn the transistor on for a predetermined period of time, so that the transistor will connect the at least one body via the contact to the fixed reference voltage for the predetermined period of time.

9. The system of claim 8, the timing device being a resistor and capacitor circuit.

10. The system of claim 1, the timing device being a resistor and capacitor circuit.

11. The system of claim 1, the at least one body of the at least one transistor device comprising a plurality of transistor devices each having a body linked to one another.

12. The system of claim 11, the linked bodies comprising a single well.

13. A method of limiting the charge on at least one body of at least one transistor device on an SOI MOSFET structure comprising the steps of:

monitoring the charge on the at least one body to determine a charge level of the at least one body;

connecting the at least one body to a fixed reference voltage when the charge level on the at least one body is above a threshold level;

waiting a predetermined period of time based on a time constant associated with a timing device so that the body can reach an acceptable charge level below the threshold level to mitigate problems associated with floating body effects of the SOI MOSFET structure; and

disconnecting the at least one body from the reference voltage after the predetermined period of time to retain the benefits associated with floating body effects at the acceptable charge level.

14. The method of claim 13, the at least one transistor device being an NMOS device and the fixed reference voltage being ground.

15. The method of claim 13, the at least one transistor device being a PMOS device and the fixed reference voltage being V_DD.

16. The method of claim 13, the at least one body of the at least one transistor device comprises a plurality of transistor devices each having a body linked to one another.

17. The method of claim 13, further comprising transmitting a signal to the timing device when the charge level on the at least one body is above a threshold level causing the connecting of the at least one body to a fixed reference voltage.

18. A system for limiting the charge on a plurality of linked bodies of a plurality of transistor devices on an SOI MOSFET structure comprising:

connector coupled to at least one of the plurality of linked bodies;

a charge detector system that measures the charge on the at least one body via the contact and transmits a signal in response to a charge measurement above a threshold level;

a switch system operable to connect the at least one body via the contact to a fixed reference voltage; and

a timer device that receives the signal from the charge detector system and causes the switch system to connect the at least one body via the contact to the fixed reference voltage for a predetermined period of time to facilitate the charge level on the body being sufficiently discharged to an acceptable charge level below the threshold level to mitigate problems associated with floating body effects of the SOI MOSFET structure, the switching system disconnects the at least one body from the fixed reference voltage after the predetermined period of time to retain the benefits associated with floating body effects of the SOI MOSFET structure at the acceptable charge level.

19. The system of claim 18, the at least one transistor device being an NMOS device and the fixed reference voltage being ground.

20. The system of claim 19, the at least one transistor device being a PMOS device and the fixed reference voltage being V_DD.

21. A system for limiting the charge on at least one body of at least one transistor device on an SOI MOSFET structure comprising:

means for monitoring the charge on the at least one body to determine a charge level of the at least one body;

means for connecting the at least one body to a fixed reference voltage when the charge level on the at least one body is above a threshold level; and

means for controlling the period of time that the means for connecting connects the at least one body to a fixed reference voltage, the means for controlling the period of time being adapted to receive a signal from the means for monitoring and cause the means for connecting to connect the at least one body to the fixed reference voltage for a predetermined period of time to facilitate the charge level on the body being sufficiently discharged to an acceptable charge level below the threshold level to mitigate problems associated with floating body effects of the SOI MOSFET structure, the switching system disconnects the at least one body from the fixed reference voltage after the predetermined period of time to retain the benefits associated with floating body effects of the SOI MOSFET structure at the acceptable charge level.

22. The system of claim 21, the at least one body of the at least one transistor device comprises a plurality of transistor devices each having a body linked to one another.