Photonic crystal and its fabrication

• US 6,466,360 B2
• Filed: 12/04/2001
• Issued: 10/15/2002
• Est. Priority Date: 06/09/1999
• Status: Expired due to Fees

• Current Assignee: NEC Corporation
• Original Assignee: NEC Corporation
• Inventors: Tokushima, Masatoshi
• Primary Examiner(s): Dang, Hung Xuan
• Assistant Examiner(s): Spector, David N.
• Application Number:
  US10/011,444
• Publication Number:
  US 20020051275A1
• Time in Patent Office: 315 Days
• Field of Search: 216/2, 216/24, 359/321, 359/322, 372/39, 372/43, 372/45, 385/4, 385/10, 385/129, 385/131, 385/132, 438/31, 438/689, 438/696
• US Class Current: 359/321
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02B 6/1225 comprising photonic band-gap structures or photonic lattices

Abstract

A photonic crystal comprises a plurality of elongated elements formed of a first dielectric material and arranged in a two-dimensional periodic honeycomb lattice. A second dielectric material surrounds the elongated elements and extending between them. The second dielectric material defines between the elongated elements a plurality of spaces filled with a third dielectric material. The first dielectric material has permittivity that is greater than permittivity of the second dielectric material and permittivity of the third dielectric material.

Claims

1. A method of fabricating a photonic crystal, comprising:

providing a substrate;

forming within said substrate a plurality of elongated elements of a first dielectric material in a two-dimensional periodic honeycomb lattice;

forming a layer of a second dielectric material over said substrate to a thickness such that said second dielectric material continuously extend between said plurality of elongated elements, said second dielectric material having permittivity less than permittivity of said first dielectric material.

4. The method as claimed in claim 1, wherein said dielectric substrate is made of Si.

2. A method of fabricating a photonic crystal, comprising:

providing a dielectric substrate;

oxidizing said substrate inwardly to define a plurality of elongated elements within said substrate; and

controlling the depth of oxidation of said substrate to determine dimensions of each of said plurality of elongated elements.

5. The method as claimed in claim 2, wherein said dielectric substrate is made of Si.

3. A method of fabricating a photonic crystal, comprising;

providing a substrate;

forming elongated bores within said substrate in triangular lattice; and

oxidizing said substrate inwardly to define a plurality of elongated elements within said substrate until a portion of said substrate on a line segment interconnecting centers of the adjacent two of said bores is completely oxidized.

6. The method as claimed in claim 3, wherein said dielectric substrate is made of Si.