×

Sputtering target assembly and method for depositing a thickness gradient layer with narrow transition zone

  • US 6,468,405 B1
  • Filed: 07/13/2000
  • Issued: 10/22/2002
  • Est. Priority Date: 07/15/1999
  • Status: Expired due to Term
First Claim
Patent Images

1. An apparatus for forming on a selected portion of a substrate surface a sputtered deposit having defined inner and outer peripheries, the apparatus including a target assembly comprising:

  • (a) a target comprised of a material to be sputtered and having a planar sputtering surface including an erosion track area;

    (b) a collimating shield positioned proximate to said sputtering surface and surrounding at least a portion of said erosion track area, said collimating shield comprising an inwardly facing wall defining an interior space and extending for a first length in a direction away from said erosion track area; and

    (c) a blocking shield centrally positioned within said interior space and overlying a central portion of said erosion track area, said blocking shield comprising an outwardly facing wall extending for a second length in the direction away from said erosion track area and forming an open-ended channel for sputtered species between said inwardly and outwardly facing walls, said walls defining said inner and outer peripheries of the sputtered deposit, wherein;

    i. the collimating shield (b) defines and limits the size of the outer periphery of the deposit and said first length thereof is sufficient to block deposition of high incident angle sputtered species; and

    ii. the blocking shield (c) defines and limits the size of the inner periphery of the deposit and said second length thereof is sufficient to further block deposition of high incident angle sputtered species from the portion of the erosion track area adjacent the inwardly facing wall of the collimating shield (b).

View all claims
  • 6 Assignments
Timeline View
Assignment View
    ×
    ×