Semiconductor memory with voids for suppressing crystal defects

  • US 6,469,339 B1
  • Filed: 02/02/2001
  • Issued: 10/22/2002
  • Est. Priority Date: 08/23/2000
  • Status: Expired due to Term
First Claim
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1. A semiconductor device comprising:

  • a semiconductor substrate having a main surface;

    a groove formed at the main surface of said semiconductor substrate;

    a first insulating film filling said groove;

    two conductive layers formed over said first insulating film with a space between each other;

    an opening formed in said first insulating film, and exposing the surface of said semiconductor substrate located immediately under the region located between said two conductive layers;

    a second insulating film filling said opening, and covering said two conductive layers; and

    a void formed in said opening filled with said second insulating film.

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