Photoelectric conversion devices and photoelectric conversion apparatus employing the same

• US 6,483,163 B2
• Filed: 12/04/2000
• Issued: 11/19/2002
• Est. Priority Date: 09/02/1997
• Status: Expired due to Term

• Current Assignee: Nikon Corporation
• Original Assignee: Nikon Corporation
• Inventors: Isogai, Tadao, Suzuki, Satoshi
• Primary Examiner(s): JACKSON JR, JEROME
• Application Number:
  US09/729,469
• Publication Number:
  US 20010000068A1
• Time in Patent Office: 715 Days
• Field of Search: 257/297, 257/398, 257/446
• US Class Current: 257/446
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H01L 31/068 the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells

Abstract

A photoelectric conversion device comprises a semiconductor substrate, a same-dopant-type semiconductor layer, a photodiode having a charge-accumulation region, a JFET (which has a gate region, a source region, a channel region, and a drain region, the drain region electrically connected to the substrate 100), a transfer gate for transferring a charge from the photodiode to the gate region, and a reset drain having a charge-drain region for draining excess charges generated by the photodiode, the reset drain also controlling the electric potential of the gate region. Two overflow-control regions are included, one at the boundary between the charge-accumulation region and the charge-drain region within the device, one at the boundary between the charge-accumulation region and the charge-drain region of an adjacent device. Two reset gates are also provided, one at the boundary between the JFET gate and the reset drain within a device and one at the boundary between the JFET gate and a reset drain of a n adjacent device. The layer is preferably more lightly doped relative to the substrate, such that sensitivity to longer wavelengths is increased. When used as a pixel in a pixel matrix, the device (and each pixel) may be surrounded by filled trenches extending downward from the top surface of the layer. The trenches may be filled so as to decrease the resistance between the substrate and the layer, and so as to reduce or eliminate cross-talk between pixels.

Claims

1. A photoelectric conversion apparatus, comprising:

(a) a base comprising a first conductive-type higher-density semiconductor substrate and a first conductive-type lower-density semiconductor layer formed on the first conductive-type higher-density semiconductor substrate;

(b) a plurality of pixels formed in the base, each pixel including a device activated by a voltage applied via the first conductive-type higher-density semiconductor substrate and the first conductive-type lower-density semiconductor layer, in this order; and

(c) filled trenches between any two adjacent pixels in the base, the filled trenches extending downward from the top surface of the first conductive-type lower-density semiconductor layer, each of the filled trenches being filled with one material that has a conductivity with respect to the first conductive-type lower-density semiconductor layer, so as to reduce the resistance between the first conductive-type higher-density semiconductor substrate and a surface region of the first conductive-type lower-density semiconductor layer, so as to reduce crosstalk between pixels.

2. The photoelectric conversion apparatus of claim 1, wherein the bottom of each trench reaches at least to the top surface of the first conductive-type higher-density semiconductor substrate.

3. The photoelectric conversion apparatus of claim 1, wherein the bottom of each trench does not reach the top surface of the first conductive-type higher-density semiconductor substrate.

8. The photoelectric conversion apparatus of claim 1, wherein the first conductive-type lower-density semiconductor layer is an epitaxial layer.

4. A photoelectric conversion apparatus, comprising:

(a) a base comprising a first conductive-type higher-density semiconductor substrate and a first conductive-type lower-density semiconductor layer formed on the first conductive-type higher-density semiconductor substrate;

(b) a plurality of pixels formed in the base, each pixel including a device activated by a voltage applied via the first conductive-type higher-density semiconductor substrate and the first conductive-type lower-density semiconductor layer, in this order; and

(c) filled trenches between any two adjacent pixels in the base, the filled trenches extending downward from the top surface of the first conductive-type lower-density semiconductor layer, each of the filled trenches being filled with one or more materials so as to reduce the resistance between the first conductive-type higher-density semiconductor substrate and a surface region of the first conductive-type lower-density semiconductor layer, and to reduce crosstalk between pixels, wherein a conductive material that has a conductivity with respect to the first conductive-type lower-density semiconductor layer is formed along, the inner wall of each trench, and an insulator fills the rest of the space in the trench.

9. The photoelectric conversion apparatus of claim 4, wherein the bottom of each trench reaches at least to the top surface of the first conductive-type higher-density semiconductor substrate.

10. The photoelectric conversion apparatus of claim 4, wherein the bottom of each trench does not reach the top surface of the first conductive-type higher-density semiconductor substrate.

11. The photoelectric conversion apparatus of claim 4, wherein the first conductive-type lower-density semiconductor layer is an epitaxial layer.

12. The photoelectric conversion apparatus of claim 4, wherein the conductive material is polysilicon containing a first conductive-type impurity.

5. A photoelectric conversion apparatus, comprising:

(a) a base comprising a first conductive-type higher-density semiconductor substrate and a first conductive-type lower-density semiconductor layer formed on the first conductive-type higher-density semiconductor substrate;

(b) a plurality of pixels formed in the base, each pixel including a device activated by a voltage applied via the first conductive-type higher-density semiconductor substrate and the first conductive-type lower-density semiconductor layer, in this order; and

(c) filled trenches between any two adjacent pixels in the base, the filled trenches extending downward from the top surface of the first conductive-type lower-density semiconductor layer, wherein an insulator is formed along the inner wall of each trench, except for the bottom and an area near the top of the trench, and a conductive material that has a conductivity with respect to the first conductive-type lower-density semiconductor layer fills the rest of the space in the trench, so as to reduce the resistance between the first conductive-type higher-density semiconductor substrate and a surface region of the first conductive-type lower-density semiconductor layer, and to reduce crosstalk between pixels.

6. The photoelectric conversion apparatus of claim 5, wherein the conductive material is polysilicon containing a first conductive-type impurity.

13. The photoelectric conversion apparatus of claim 5, wherein the bottom of each trench reaches at least to the top surface of the first conductive-type higher-density semiconductor substrate.

14. The photoelectric conversion apparatus of claim 5, wherein the bottom of each trench does not reach the top surface of the first conductive-type higher-density semiconductor substrate.

15. The photoelectric conversion apparatus of claim 5, wherein the first conductive-type lower-density semiconductor layer is an epitaxial layer.

7. A photoelectric conversion apparatus, comprising:

(a) a base comprising a first conductive-type higher-density semiconductor substrate and a first conductive-type lower-density semiconductor layer formed on the first conductive-type higher-density semiconductor substrate;

(b) a plurality of pixels formed in the base, each pixel including a device activated by a voltage applied via the first conductive-type higher-density semiconductor substrate and the first conductive-type lower-density semiconductor layer, in this order; and

(c) filled trenches between any two adjacent pixels in the base, the filled trenches extending downward from the top surface of the first conductive-type lower-density semiconductor layer, each of the filled trenches having an inner wall that is surrounded, inside the base, by a first conductive-type diffusion layer, and each of the trenches being filled with one or more materials so as to reduce the resistance between the first conductive-type higher-density semiconductor substrate and a surface region of the first conductive-type lower-density semiconductor layer, so as to reduce crosstalk between pixels.

16. The photoelectric conversion apparatus of claim 7, wherein the bottom of each trench reaches at least to the top surface of the first conductive-type higher-density semiconductor substrate.

17. The photoelectric conversion apparatus of claim 7, wherein the bottom of each trench does not reach the top surface of the first conductive-type higher-density semiconductor substrate.

18. The photoelectric conversion apparatus of claim 7, wherein the first conductive-type lower-density semiconductor layer is an epitaxial layer.