Active matrix type semiconductor display device
First Claim
1. An active matrix type semiconductor display device, comprising:
- a source signal line driver circuit over a first substrate for supplying an image signal to a plurality of source signal lines;
a gate signal line driver circuit over said first substrate for supplying a selection signal to a plurality of gate signal lines;
an active matrix circuit over said first substrate in which pixels each including a pixel TFT and a pixel electrode connected to a drain electrode of said pixel TFT are arranged in matrix form, a source electrode of said pixel TFT is connected to corresponding one of the source signal lines, and a gate electrode of said pixel TFT is connected to corresponding one of said gate signal lines;
two counter electrodes over a second substrate opposed to said first substrate; and
a display medium sandwiched between said pixel electrode of each of said pixels and corresponding one of said counter electrodes, wherein said two counter electrodes are respectively disposed correspondingly to pixels of one source signal line at every two source signal lines among said plurality of source signal lines, and wherein the two counter electrodes are respectively applied with a potential opposite to a potential of an image signal supplied to the corresponding source signal line.
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Accused Products
Abstract
There is provided an active matrix type semiconductor display device which realizes low power consumption and high reliability. In the active matrix type semiconductor display device of the present invention, a counter electrode is divided into two, different potentials are applied to the two counter electrodes, respectively and inversion driving is carried out each other. Since a potential of an image signal can be made low by doing so, it is possible to lower a voltage necessary for operation of a driver circuit. As a result, it is possible to realize improvement of reliability of an element such as a TFT and reduction of consumed electric power. Moreover, since it is possible to lower a voltage of a timing pulse supplied by the driver circuit, a booster circuit can be omitted, and reduction of an area of the driver circuit can be realized.
188 Citations
27 Claims
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1. An active matrix type semiconductor display device, comprising:
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a source signal line driver circuit over a first substrate for supplying an image signal to a plurality of source signal lines;
a gate signal line driver circuit over said first substrate for supplying a selection signal to a plurality of gate signal lines;
an active matrix circuit over said first substrate in which pixels each including a pixel TFT and a pixel electrode connected to a drain electrode of said pixel TFT are arranged in matrix form, a source electrode of said pixel TFT is connected to corresponding one of the source signal lines, and a gate electrode of said pixel TFT is connected to corresponding one of said gate signal lines;
two counter electrodes over a second substrate opposed to said first substrate; and
a display medium sandwiched between said pixel electrode of each of said pixels and corresponding one of said counter electrodes, wherein said two counter electrodes are respectively disposed correspondingly to pixels of one source signal line at every two source signal lines among said plurality of source signal lines, and wherein the two counter electrodes are respectively applied with a potential opposite to a potential of an image signal supplied to the corresponding source signal line. - View Dependent Claims (2, 3, 4)
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5. An active matrix type semiconductor display device, comprising:
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a source signal line driver circuit over a first substrate for supplying an image signal to a plurality of source signal lines;
a gate signal line driver circuit over said first substrate for supplying a selection signal to a plurality of gate signal lines;
an active matrix circuit over said first substrate in which pixels each including a pixel TFT and a pixel electrode connected to a drain electrode of said pixel TFT are arranged in matrix form, a source electrode of said pixel TFT is connected to corresponding one of said source signal lines, and a gate electrode of said pixel TFT is connected to corresponding one of said gate signal lines;
two counter electrodes over a second substrate opposed to said first substrate; and
a display medium sandwiched between said pixel electrode of each of said pixels and corresponding one of said counter electrodes, wherein said two counter electrodes are respectively disposed correspondingly to pixels of two source signal lines at every four source signal lines among said plurality of source signal lines, and wherein said two counter electrodes are respectively applied with a potential opposite to a potential of an image signal supplied to the corresponding source signal line. - View Dependent Claims (6, 7, 8)
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9. An active matrix type semiconductor display device, comprising:
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a source signal line driver circuit over a first substrate for supplying an image signal to a plurality of source signal lines;
a gate signal line driver circuit over said first substrate for supplying a selection signal to a plurality of gate signal lines;
an active matrix circuit over said first substrate in which pixels each including a pixel TFT and a pixel electrode connected to a drain electrode of said pixel TFT are arranged in matrix form, a source electrode of said pixel TFT is connected to corresponding one of said source signal lines, and a gate electrode of said pixel TFT is connected to corresponding one of said gate signal lines;
two counter electrodes over a second substrate opposed to said first substrate; and
a display medium sandwiched between said pixel electrode of each of said pixels and corresponding one of said counter electrodes, wherein said two counter electrodes are respectively disposed correspondingly to pixels of z source signal lines at every 2z source signal lines among said plurality of source signal lines, and wherein said two counter electrodes are respectively applied with a potential opposite to a potential of an image signal supplied to the corresponding source signal line. - View Dependent Claims (10, 11, 12)
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13. An electroluminescence display device comprising:
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a pixel portion and a driving circuit portion over a substrate;
at least a first thin film transistor for controlling a current and a second thin film transistor for switching each being formed in the pixel portion;
a source signal line driver circuit provided in said driving circuit portion for supplying an image signal to a plurality of source signal lines;
a gate signal line driver circuit provided in said driving circuit portion for supplying a selection signal to a plurality of gate signal lines;
at least a CMOS transistor being formed in each of said source signal line driver circuit and said gate signal line driver circuit;
a pixel electrode provided in each of pixels and being electrically connected to one of source and drain regions of said first thin film transistor;
a light emitting layer being formed over the pixel electrode; and
two counter electrodes each provided over the light emitting layer of the corresponding pixels, wherein said two counter electrodes are respectively disposed correspondingly to pixels of one source signal line at every two source signal lines among said plurality of source signal lines, and wherein the two counter electrodes are respectively applied with a potential opposite to a potential of an image signal supplied to the corresponding source signal line. - View Dependent Claims (14, 15, 16, 17)
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18. An electroluminescence display device comprising:
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a pixel portion and a driving circuit portion over a substrate;
at least a first thin film transistor for controlling a current and a second thin film transistor for switching each being formed in the pixel portion;
a source signal line driver circuit provided in said driving circuit portion for supplying an image signal to a plurality of source signal lines;
a gate signal line driver circuit provided in said driving circuit portion for supplying a selection signal to a plurality of gate signal lines;
at least a CMOS transistor being formed in each of said source signal line driver circuit and said gate signal line driver circuit;
a pixel electrode provided in each of pixels and being electrically connected to one of source and drain regions of said first thin film transistor;
a light emitting layer being formed over the pixel electrode; and
two counter electrodes each provided over the light emitting layer of the corresponding pixels, wherein said two counter electrodes are respectively disposed correspondingly to pixels of two source signal lines at every four source signal lines among said plurality of source signal lines, and wherein said two counter electrodes are respectively applied with a potential opposite to a potential of an image signal supplied to the corresponding source signal line. - View Dependent Claims (19, 20, 21, 22)
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23. An electroluminescence display device comprising:
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a pixel portion and a driving circuit portion over a substrate;
at least a first thin film transistor for controlling a current and a second thin film transistor for switching each being formed in the pixel portion;
a source signal line driver circuit provided in said driving circuit portion for supplying an image signal to a plurality of source signal lines;
a gate signal line driver circuit provided in said driving circuit portion for supplying a selection signal to a plurality of gate signal lines;
at least a CMOS transistor being formed in each of said source signal line driver circuit and said gate signal line driver circuit;
a pixel electrode provided in each of pixels and being electrically connected to one of source and drain regions of said first thin film transistor;
a light emitting layer being formed over the pixel electrode; and
two counter electrodes each provided over the light emitting layer of the corresponding pixels, wherein said two counter electrodes are respectively disposed correspondingly to pixels of z source signal lines at every 2z source signal lines among said plurality of source signal lines, and wherein said two counter electrodes are respectively applied with a potential opposite to a potential of an image signal supplied to the corresponding source signal line. - View Dependent Claims (24, 25, 26, 27)
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Specification