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Active matrix type semiconductor display device

  • US 6,489,952 B1
  • Filed: 11/12/1999
  • Issued: 12/03/2002
  • Est. Priority Date: 11/17/1998
  • Status: Expired due to Term
First Claim
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1. An active matrix type semiconductor display device, comprising:

  • a source signal line driver circuit over a first substrate for supplying an image signal to a plurality of source signal lines;

    a gate signal line driver circuit over said first substrate for supplying a selection signal to a plurality of gate signal lines;

    an active matrix circuit over said first substrate in which pixels each including a pixel TFT and a pixel electrode connected to a drain electrode of said pixel TFT are arranged in matrix form, a source electrode of said pixel TFT is connected to corresponding one of the source signal lines, and a gate electrode of said pixel TFT is connected to corresponding one of said gate signal lines;

    two counter electrodes over a second substrate opposed to said first substrate; and

    a display medium sandwiched between said pixel electrode of each of said pixels and corresponding one of said counter electrodes, wherein said two counter electrodes are respectively disposed correspondingly to pixels of one source signal line at every two source signal lines among said plurality of source signal lines, and wherein the two counter electrodes are respectively applied with a potential opposite to a potential of an image signal supplied to the corresponding source signal line.

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