Semiconductor device

  • US 6,492,665 B1
  • Filed: 11/17/2000
  • Issued: 12/10/2002
  • Est. Priority Date: 07/28/1998
  • Status: Expired due to Term
First Claim
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1. A semiconductor device comprising:

  • a semiconductor substrate including a substrate region containing a dopant of a first conductivity type;

    a gate insulating film and a gate electrode formed on the substrate region;

    an on-gate protective layer formed on the gate electrode;

    an insulator sidewall formed on respective sides of the gate electrode and the on-gate protective layer and the on-gate protective layer and under the gate insulating film, the insulator sidewall having an L-shape cross section;

    doped regions formed respectively on both sides of the insulator sidewall in the semiconductor substrate, the doped regions containing a dopant of a second conductivity type;

    an overall protective film covering the doped regions, the on-gate protective layer and the insulator sidewall having an L-shaped cross section;

    an interlevel dielectric film formed over the overall protective film and made of an insulating material that is able to be etched selectively with respect to the overall protective film;

    openings formed through the interlevel dielectric film and the overall protective film to reach the respective doped regions; and

    plug electrodes filing the openings and made of a conductive material, wherein the overall protective film is directly formed over an inside a surface of the insulator sidewall having an L-shaped cross section.

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