High quality oxide for use in integrated circuits

  • US 6,492,712 B1
  • Filed: 06/20/2000
  • Issued: 12/10/2002
  • Est. Priority Date: 06/24/1999
  • Status: Expired due to Term
First Claim
Patent Images

1. An integrated circuit element comprising:

  • a substrate; and

    an oxide layer disposed over said substrate wherein said oxide layer has a first portion and a second portion, and has an interface trap density (Nit) in the range of 5×

    1010/cm2 to 3×

    109/cm2 or less and has a thickness in the range of less than 15 Å

    to 40 Å

    .

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