Chip crack stop design for semiconductor chips

• US 6,495,918 B1
• Filed: 09/05/2000
• Issued: 12/17/2002
• Est. Priority Date: 09/05/2000
• Status: Expired due to Term

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Infineon Technologies AG, International Business Machines Corporation
• Inventors: Brintzinger, Axel Christoph
• Primary Examiner(s): Clark, Sheila V.
• Application Number:
  US09/655,461
• Time in Patent Office: 833 Days
• Field of Search: 257/758, 257/750, 257/752, 257/692, 257/784
• US Class Current: 257/758
• CPC Class Codes: H01L 23/562 Protection against mechanical damage H01L23/02, H01L23/28 take precedence
• CPC Class Codes: H01L 23/585 comprising conductive layers or plates or strips or rods or rings H01L23/60, H01L23/62, H01L23/64, H01L23/66 take precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A semiconductor chip, in accordance with the present invention, includes a substrate and a crack stop structure. The crack structure includes a first conductive line disposed over the substrate and at least two first contacts connected to the substrate and to the first conductive line. The at least two first contacts are spaced apart from each other and extend longitudinally along a length of the first conductive line. A second conductive line is disposed over a portion of the first conductive line, and at least two second contacts are connected to the first conductive line and the second conductive line. The at least two second contacts are spaced apart from each other and extend longitudinally along a length of the second conductive line.

Claims

1. A semiconductor chip, comprising:

a substrate; and

a crack stop structure comprising;

a first conductive line disposed over the substrate;

at least two first contacts connected to the substrate and to the first conductive line, the at least two first contacts being spaced apart from each other and extending longitudinally along a length of the first conductive line;

a second conductive line disposed over a portion of the first conductive line; and

at least two second contacts connected to the first conductive line and the second conductive line, the at least two second contacts being spaced apart from each other and extending longitudinally along a length of the second conductive line; and

wherein said first and second contacts are of substantially greater longitudinal dimension than lateral dimension.

2. The chip as recited in claim 1, wherein the at least two first contacts includes three contacts.

3. The chip as recited in claim 1, wherein the at least two second contacts includes three contacts.

4. The chip as recited in claim 1, further comprising a dielectric material surrounding the crack stop structure.

5. The chip as recited in claim 4, wherein the dielectric material includes an air-filled trench over the second conductive line.

6. The chip as recited in claim 4, wherein the second conductive line includes a terminal via.

7. The chip as recited in claim 1, further comprising:

a third conductive line disposed over a portion of the second conductive line; and

at least two third contacts connected to the second conductive line and the third conductive line, the at least two third contacts being spaced apart from each other and extending longitudinally along a length of the third conductive line.

8. The chip as recited in claim 7, wherein the third conductive line includes a terminal via.

9. The chip as recited in claim 1, wherein the first and second metal lines and the at least two first contacts and the at least two second contacts form a serpentine structure.

10. The chip as recited in claim 9, wherein the serpentine structure is located adjacent to a dicing channel of the chip.

11. The chip as recited in claim 1, wherein the at least two first contacts and the at least two second contacts extend over the entire length of the first metal line.

12. A semiconductor chip, comprising:

a substrate; and

a crack stop structure comprising;

a first conductive line disposed over the substrate;

at least two first contacts connected to the substrate and to the first conductive line, the at least two first contacts being spaced apart from each other and extending longitudinally along a length of the first conductive line;

a second conductive line disposed over a portion of the first conductive line;

at least two second contacts connected to the substrate, the at least two second contacts being spaced apart from each other and extending longitudinally along a length of the first conductive line; and

a dielectric material surrounding the crack stop structure, the dielectric material including an air-filled trench over the second conductive line; and

wherein said first and second contacts are of substantially greater longitudinal dimension than lateral dimension.

13. The chip as recited in claim 12, wherein the at least two first contacts includes three contacts.

14. The chip as recited in claim 12, wherein the at least two second contacts includes three contacts.

15. The chip as recited in claim 12, wherein the second conductive line includes a terminal via.

16. The chip as recited in claim 12, wherein the first and second metal lines and the at least two first contacts and the at least two second contacts form a serpentine structure.

17. The chip as recited in claim 16, wherein the serpentine structure is located adjacent to a dicing channel of the chip.

18. The chip as recited in claim 12, wherein the at least two first contacts and the at least two second contacts extend over the entire length of the first metal line.