Cleaving process to fabricate multilayered substrates using low implantation doses
First Claim
1. A method of forming substrates, the method comprising:
- providing a donor substrate;
forming a cleave layer comprising a cleave plane on the donor substrate, the cleave plane extending from a periphery of the donor substrate through a center region of the substrate;
forming a device layer on the cleave layer, the device layer comprising an epitaxial material;
selectively introducing a plurality of particles along the periphery of the cleave plane to form a higher concentration region at the periphery and a lower concentration region in the center region;
providing selected energy to the donor substrate to initiate a cleaving action at the higher concentration region at the periphery of the cleave plane to cleave the device layer at the cleave plane.
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Abstract
A method of forming substrates. The method includes providing a donor substrate; and forming a cleave layer comprising a cleave plane on the donor substrate. The cleave plane extends from a periphery of the donor substrate through a center region of the substrate. The method also includes forming a device layer on the cleave layer. The method also includes selectively introducing a plurality of particles along the periphery of the cleave plane to form a higher concentration region at the periphery and a lower concentration region in the center region. Selected energy is provided to the donor substrate to initiate a cleaving action at the higher concentration region at the periphery of the cleave plane to cleave the device layer at the cleave plane.
308 Citations
12 Claims
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1. A method of forming substrates, the method comprising:
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providing a donor substrate;
forming a cleave layer comprising a cleave plane on the donor substrate, the cleave plane extending from a periphery of the donor substrate through a center region of the substrate;
forming a device layer on the cleave layer, the device layer comprising an epitaxial material;
selectively introducing a plurality of particles along the periphery of the cleave plane to form a higher concentration region at the periphery and a lower concentration region in the center region;
providing selected energy to the donor substrate to initiate a cleaving action at the higher concentration region at the periphery of the cleave plane to cleave the device layer at the cleave plane. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification