Semiconductor device

DC
  • US 6,501,129 B2
  • Filed: 03/29/2001
  • Issued: 12/31/2002
  • Est. Priority Date: 03/30/2000
  • Status: Expired due to Term
First Claim
Patent Images

1. A semiconductor device, comprising:

  • a semiconductor substrate;

    a semiconductor layer of a first conductivity type formed on one main surface region of said semiconductor substrate;

    a drain region of the first conductivity type formed in said semiconductor layer of the first conductivity type;

    a base region of a second conductivity type formed in a surface region of said drain region;

    a source region of the first conductivity type formed in a surface region of said base region;

    a trench having at least one of a conductive layer and an insulating layer buried therein and extending from the surface of the base region through the base region to reach an inner region of the drain region;

    an impurity diffusion region of the second conductivity type formed in the periphery of the side wall of that portion of the trench which is positioned within the drain region and having an impurity concentration lower than that in the base region;

    a gate insulating film formed to cover a part of the surfaces of the drain region, the base region and the source region; and

    a gate electrode formed on the gate insulating film.

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