Method of forming a metal or metal nitride interface layer between silicon nitride and copper

  • US 6,518,167 B1
  • Filed: 04/16/2002
  • Issued: 02/11/2003
  • Est. Priority Date: 04/16/2002
  • Status: Active Grant
First Claim
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1. A method of forming a metal layer interface between a copper layer and a silicon nitride layer, the method comprising:

  • providing a metal organic gas over a copper layer;

    forming a metal layer from reactions between the metal organic gas and the copper layer; and

    depositing a silicon nitride layer over the metal layer and copper layer, the metal layer providing an interface adhesion between the silicon nitride layer and the copper layer.

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