Multiple seed layers for metallic interconnects

DC
  • US 6,518,668 B2
  • Filed: 12/04/2000
  • Issued: 02/11/2003
  • Est. Priority Date: 10/02/1999
  • Status: Expired due to Term
First Claim
Patent Images

1. A multiple seed layer structure used to fabricate devices, said multiple seed layer structure comprises:

  • a substrate;

    a patterned insulating layer formed on said substrate, said patterned insulating layer including at least one opening and a top field surface surrounding said at least one opening;

    a barrier layer disposed over said patterned insulating layer including over inside surfaces of the at least one opening;

    a first seed layer disposed over the barrier layer, said first seed layer comprising a substantially conformal seed layer whose thickness on the sidewalls of the opening (at about mid-depth) is about 25-100% of its thickness on the field;

    a second seed layer disposed over the first seed layer, said second seed layer comprising a substantially non-conformal seed layer whose thickness on the sidewalls of the opening (at about mid-depth) is less than about 25% of its thickness on the field, and wherein said second seed layer being thicker than said first seed layer over the field; and

    an electroplated metallic layer disposed over the second seed layer, wherein the electroplated metallic layer comprises a material selected from a group consisting of Cu, Ag, or alloys comprising one or more of these metals.

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