Multi-layered wiring layer and method of fabricating the same

  • US 6,538,324 B1
  • Filed: 06/19/2000
  • Issued: 03/25/2003
  • Est. Priority Date: 06/24/1999
  • Status: Expired due to Term
First Claim
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1. A barrier film preventing diffusion of copper from a copper wiring layer formed on a semiconductor substrate, comprising a multi-layered structure of first and second films,said first film being composed of crystalline metal containing nitrogen therein, said second film being composed of amorphous metal nitride, said barrier film being constituted of common metal atomic species, said first film being formed on said second film, said first film in direct contact with said second film, said first film containing nitrogen in a smaller content than that of said second film.

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