Method for fabricating an isolated microelectromechanical system device

• US 6,569,701 B2
• Filed: 10/25/2001
• Issued: 05/27/2003
• Est. Priority Date: 10/25/2001
• Status: Expired due to Term

• Current Assignee: Longitude Licensing Limited (Vector Capital Corporation)
• Original Assignee: Rockwell Automation Technologies Incorporated (Allen-Bradley Co., Inc.)
• Inventors: Kretschmann, Robert J., Harris, Richard D., Lucak, Mark A., Knieser, Michael J.
• Primary Examiner(s): Cuneo, Kamand
• Assistant Examiner(s): SARKAR, ASOK K
• Application Number:
  US10/002,725
• Publication Number:
  US 20030082928A1
• Time in Patent Office: 579 Days
• Field of Search: 216/2, 216/33, 216/75, 216/79, 216/99, 216/100, 361/277, 438/22, 438/48, 438/49, 438/50
• US Class Current: 438/48
• CPC Class Codes: B81C 1/00357 involving bonding one or several substrates on a non-temporary support, e.g. another substrate
• CPC Class Codes: B81C 2201/019 Bonding or gluing multiple substrate layers
• CPC Class Codes: B81C 2203/0109 Bonding an individual cap on the substrate

Abstract

A method is presented for fabricating an electrically isolated MEMS device having a conductive outer MEMS element, and an inner movable MEMS element spaced apart from the conductive outer MEMS element. The inner element includes a nonconductive base having a plurality of conductive structures extending therefrom. The conductive components are formed by plating a conductive material into a pre-formed mold which defines the shape of the conductor.

Claims

1. A method for fabricating a MEMS device, comprising the steps of:

(a) providing a substrate having an upper surface;

(b) depositing a sacrificial layer onto the upper surface of the substrate, wherein the sacrificial layer has an upper surface;

(c) depositing a nonconductive layer onto the upper surface of the sacrificial layer;

(d) depositing a mold onto the substrate, wherein the mold has at least one void aligned with the nonconductive layer;

(e) depositing conductive material into the at least one void to form conductive elements extending from the nonconductive layer;

(f) removing the mold; and

(g) removing the sacrificial layer to release a movable element including the nonconductive layer and conductive material from the substrate.

2. The method as recited in claim 1, wherein step (e) further comprises electroplating the conductive material.

3. The method as recited in claim 2, wherein step (e) further comprises electrolessplating the conductive material.

4. The method as recited in claim 2, wherein step (e) further comprises coating the nonconductive layer with a shorting layer prior to plating.

5. The method as recited in claim 3, wherein step (d) further comprises coating the nonconductive layer with a catalyst prior to plating.

6. The method as recited in claim 1, wherein the nonconductive layer is selected from the group consisting of silicon nitride and silicon dioxide.

7. The method as recited in claim 1, wherein the substrate is selected from the group consisting of glass, high resistivity silicon, crystalline sapphire, crystalline silicon, polycrystalline silicon, silicon carbide, ceramic, and gallium arsenide.

8. The method as recited in claim 1, wherein the conductive material comprises a metal.

9. The method as recited in claim 8, wherein the conductive layer is selected from the group consisting of nickel, gold, and copper.

10. The method as recited in claim 8, wherein the nonconductive layer and conductive material are arranged in a manner such that a first portion of the movable element is electrically isolated from a second portion of the movable element.

11. The method as recited in claim 1, further comprising the step of depositing a second conductive material onto the substrate, wherein the second conductive material is spaced from the movable element by a variable size gap.