System and method for solder ball rework

• US 6,574,861 B1
• Filed: 04/11/2001
• Issued: 06/10/2003
• Est. Priority Date: 04/11/2001
• Status: Active Grant

• Current Assignee: Qualcomm, Inc.
• Original Assignee: Applied Micro Circuits Corporation (MACOM Technology Solutions Holdings, Inc.)
• Inventors: Sharma, Laxminarayan, Yang, Hong
• Primary Examiner(s): Eley, Timothy V.
• Assistant Examiner(s): Grant, Alvin J.
• Application Number:
  US09/832,779
• Time in Patent Office: 790 Days
• Field of Search: 298/43, 298/34, 298/41, 298/40, 298/52
• US Class Current: 29/843
• CPC Class Codes: H01R 4/024 comprising preapplied solder
• CPC Class Codes: H01R 43/0235 for applying solder H01R43/0228 takes precedence
• CPC Class Codes: H01R 43/0249 for simultaneous welding or soldering of a plurality of wires to contact elements
• CPC Class Codes: H01R 43/0256 for soldering or welding connectors to a printed circuit board
• CPC Class Codes: H05K 2203/025 Abrading, e.g. grinding or sand blasting deburring, rounding, bevelling or smoothing conductor edges H05K2203/0346
• CPC Class Codes: H05K 3/225 Correcting or repairing of printed circuits H05K1/0292, H05K3/222, H05K3/288, H05K3/4685 take precedence
• CPC Class Codes: H05K 3/3457 Solder materials or compositions; Methods of application thereof
• CPC Class Codes: Y10T 29/49133 with component orienting
• CPC Class Codes: Y10T 29/49144 by metal fusion
• CPC Class Codes: Y10T 29/49146 with encapsulating, e.g., potting, etc.
• CPC Class Codes: Y10T 29/49149 by metal fusion bonding
• CPC Class Codes: Y10T 29/49165 by forming conductive walled aperture in base

Abstract

A system and method have been provided for removing high lead content solder balls from the surface of a circuit package for the purpose of rework. The invention is applicable to ball grid array (BGA), C4 balls, chip scale balls, and flip chip bumps. Advantageously, the room temperature solder ball rework procedure minimizes damage to the circuit package. Specifically, a thin-film stainless steel mask with openings to expose the solder balls, is formed over the circuit package, and the solder balls are removed in a shearing or grinding operation, leaving a solder ball residue. Then, a conventional thick mask film is formed and a solder paste is deposited to fill the apertures. The solder ball residue forms a wettable surface for the low temperature attachment of new solder balls.

Claims

1. A method for removing solder balls attached to a ball grid array circuit package, the method comprising:

forming a thin film mask overlying a first surface of a ball grid array circuit package, exposing solder balls attached to pad areas of the surface;

removing the exposed solder balls; and

removing the thin film mask.

2. The method of claim 1 wherein removing the exposed solder balls includes removing the solder balls with a process selected from the group including shearing, grinding, and chemical-mechanical polishing (CMP).

3. The method of claim 2 wherein forming a thin film mask overlying a first surface of a ball grid array circuit package includes forming a mask having a substantially planar surface with openings to expose the solder balls attached to the underlying circuit package surface.

4. The method of claim 3 wherein forming a thin film mask overlying a first surface of a ball grid array circuit package includes forming a mask having a thickness in the range from 2 to 5 mils.

5. The method of claim 3 wherein forming a thin film mask overlying a first surface of a ball grid array circuit package includes forming a mask having a maximum thickness approximately equal to one-third the solder ball diameter.

6. The method of claim 3 wherein forming a thin film mask overlying a first surface of a ball grid array circuit package includes forming a thin film mask from a material selected from the group including stainless steel, molybdenum, and hard plastics.

7. The method of claim 1 wherein forming a thin film mask overlying a first surface of a ball grid array circuit package includes:

forming a mask having a substantially planar surface with openings;

aligning the mask openings with the solder balls attached to the circuit package surface; and

depositing the mask on the circuit package surface.

8. The method of claim 7 in which the balls attached to the circuit package are selected from the group including ball grid array (BGA) balls, C4 balls, chip scale package (CSP) balls, flip chip bumps, and solder columns.

9. The method of claim 8 in which the balls are selected from the group including eutectic solder, eutectic/high lead solder, and high lead balls.

10. The method of claim 8 wherein the solder balls have a melting temperature of 183 degrees C., or higher.

11. The method of claim 1 in which the ball grid array circuit package is selected from the group including flip chip, chip scale, ball grid array, ceramic, and semiconductor packages.

12. The method of claim 1 wherein removing the exposed solder balls includes removing the exposed solder balls at room temperature.

13. A method for reworking solder balls attached to a ball grid array circuit package, the method comprising:

forming a thin film mask overlying a first surface of a ball grid array circuit package, exposing solder balls attached to pad areas of the surface;

removing the exposed solder balls to leave a ball residue attached to the surface pads;

removing the thin film mask;

forming a thick film mask overlying the first surface, exposing the ball residue attached to the surface pads;

depositing a eutectic solder paste over the ball residue; and

attaching solder balls to the solder paste.

14. The method of claim 13 wherein forming a thick film mask includes forming a substantially planar surface with openings to expose the ball residue.

15. The method of claim 14 wherein forming a thick film mask includes forming a mask having a thickness in the range from 5 to 10 mils.

16. The method of claim 15 wherein forming a thick film 10 mask includes forming an opening having a diameter and an aspect ratio to form an aperture volume that is in the range of 15 to 30% of the solder ball volume.

17. The method of claim 16 wherein forming an opening having an aspect ratio includes forming a higher range aspect ratio;

and

wherein depositing solder paste to overlie the ball residue includes increasing the volume of the deposited solder paste in response to the higher range aspect ratio mask openings.

18. The method of claim 13 wherein depositing solder paste includes depositing eutectic solder paste having a melting temperature in the range from 183 to 225 degrees C.;

and

wherein attaching solder balls to the solder paste includes heating the circuit package to melt the solder paste.

19. The method of claim 18 wherein removing the exposed solder balls includes removing the solder balls with a process selected from the group including shearing, grinding, and chemical-mechanical polishing (CMP).

20. The method of claim 13 wherein forming a thin film mask overlying a first surface of a ball grid array circuit package includes forming a mask having a substantially planar surface with openings to expose the solder balls attached to the underlying circuit package surface.

21. The method of claim 20 wherein forming a thin film mask overlying a first surface of a ball grid array circuit package includes forming a mask having a thickness in the range from 2 to 5 mils.

22. The method of claim 20 wherein forming a thin film mask overlying a first surface of a ball grid array circuit package includes forming a mask having a thickness that is approximately one-third the solder ball diameter.

23. The method of claim 20 wherein forming a thin film mask overlying a first surface of a ball grid array circuit package includes forming a thin film mask from a material selected from the group of materials including stainless steel, molybdenum, and hard plastic.

24. The method of claim 13 wherein forming a thin film mask overlying a first surface of a ball grid array circuit package includes:

forming a mask having a substantially planar surface with openings;

aligning the mask openings with the solder balls attached to the circuit package surface; and

depositing the mask on the circuit package surface.

25. The method of claim 24 in which the solder balls attached to the circuit package are selected from the group including ball grid array (BGA) balls, C4 balls, chip scale package (CSP) balls, and flip chip bumps.

26. The method of claim 25 in which the solder balls are selected from the group including eutectic solder, eutectic/high lead solder, and high lead balls.

27. The method of claim 26 wherein the solder balls have a melting temperature of 183 degrees C., or higher.

28. The method of claim 13 in which the ball grid array circuit package is selected from the group including flip chip, chip scale, ball grid array, ceramic, and semiconductor packages.

29. The method of claim 13 wherein removing the exposed solder balls includes removing the exposed solder balls at room temperature.

30. A solder ball removal device, for use in demounting solder balls soldered to a circuit package surface, the device comprising:

a thin planar sheet of film, formed to overlie a circuit package surface to receive a removal element; and

openings in the film to expose solder balls attached to the circuit package surface.

31. The device of claim 30 wherein the film has a thickness in the range from 2 to 5 mils.

32. The device of claim 30 wherein the removal element is selected from group including a shear, a grinder, and a chemical-mechanical polisher (CMP).

33. The device of claim 30 wherein the film is a material selected from the group including stainless steel, molybdenum, and hard plastic.

34. The device of claim 30 wherein the film has a thickness that is approximately two-ninths ({fraction (2/9)}) the height of the solder ball to be removed.