Transistor device having an enhanced width dimension and a method of making same

  • US 6,580,122 B1
  • Filed: 03/20/2001
  • Issued: 06/17/2003
  • Est. Priority Date: 03/20/2001
  • Status: Expired due to Term
First Claim
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1. A transistor, comprising:

  • a semiconducting substrate;

    a recessed isolation structure formed in said substrate, said isolation structure defining a recess thereabove;

    a gate electrode and a gate insulation layer formed above said substrate, a portion of said gate electrode and said gate insulation layer extending into said recess above said recessed isolation structure; and

    a source region and a drain region formed in said substrate.

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