Method of manufacturing a semiconductor device with fluorinated layer for blocking alkali ions

  • US 6,607,947 B1
  • Filed: 03/06/1996
  • Issued: 08/19/2003
  • Est. Priority Date: 05/29/1990
  • Status: Expired due to Fees
First Claim
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1. A method of manufacturing a semiconductor device comprising the steps of:

  • forming an underlying insulating film comprising silicon oxide over a substrate;

    forming a semiconductor layer comprising silicon on said insulating film wherein said semiconductor layer includes a channel region;

    crystallizing the semiconductor layer;

    forming a gate insulating film on the crystallized semiconductor layer; and

    forming a gate electrode on said gate insulating film, wherein said underlying insulating film is doped with fluorine during the formation thereof.

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