Method of manufacturing a semiconductor device with fluorinated layer for blocking alkali ions

• US 6,607,947 B1
• Filed: 03/06/1996
• Issued: 08/19/2003
• Est. Priority Date: 05/29/1990
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Zhang, Hongyong
• Primary Examiner(s): PERT, EVAN T
• Application Number:
  US08/611,571
• Time in Patent Office: 2,722 Days
• Field of Search: 437/21, 437/40.TFT, 437/40.TFI, 437/41.TFT, 437/41.TFI, 437/238, 148/DIG.118, 148/DIG.158, 204/192.22, 204/192.23, 438/151, 438/158, 438/162, 438/166, 438/784, 438/157, 438/164, 438/149
• US Class Current: 438/151
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: Y10S 148/118 Oxide films

Abstract

A method of manufacturing a gate-insulated thin film transistor is disclosed. One improvement is that the thin film transistor is formed on a substrate with a blocking layer in between so that it is possible to prevent the transistor from being contaminated with impurities such as alkali ions which exist in the substrate. Also, a halogen is added to either or both of the blocking layer and a gate insulator of the transistor in order that impurities such as alkaline ions, dangling bonds and the like can be neutralized. Therefore, the reliability of the device is improved.

Claims

1. A method of manufacturing a semiconductor device comprising the steps of:

forming an underlying insulating film comprising silicon oxide over a substrate;

forming a semiconductor layer comprising silicon on said insulating film wherein said semiconductor layer includes a channel region;

crystallizing the semiconductor layer;

forming a gate insulating film on the crystallized semiconductor layer; and

forming a gate electrode on said gate insulating film,

wherein said underlying insulating film is doped with fluorine during the formation thereof.

2. The method according to claim 1 wherein said fluorine is doped by adding a fluorine containing gas to an atmosphere for forming the underlying insulating film.

18. The method according to any one of claims 1, 3, 5, 7, 9, 11, 13 or 16, wherein said semiconductor device is a top-gate type thin film transistor.

19. The method according to any one of claims 1, 3, 5, 7, 9, 11, 13 or 16, wherein said semiconductor layer further includes a pair of impurity regions with said channel region there between.

20. The method according to any one of claims 1, 3, 5, 7, 9, 11, 13 or 16, wherein said semiconductor layer comprises silicon and germanium.

21. The method according to any one of claims 1, 3, 5, 7, 9, 11, 13 or 16, wherein said semiconductor layer is crystallized by heating.

22. The method according to claim 1, 3, 5, 7, 9, 11, 13 or 16, wherein said gate insulating film comprises silicon oxide.

3. A method of manufacturing a semiconductor device comprising the steps of:

forming an underlying insulating film comprising silicon oxide over a substrate;

forming a semiconductor layer comprising silicon on said insulating film wherein said semiconductor layer includes a channel region;

crystallizing said semiconductor layer;

forming a gate insulating film on the crystallized semiconductor layer; and

forming a gate electrode on said gate insulating film,

wherein each of said underlying insulating film and said gate insulating film is doped with fluorine during the formation thereof.

4. The method according to claim 3 wherein said fluorine is doped by adding a fluorine containing gas to an atmosphere for forming the underlying insulating film.

5. A method of manufacturing a semiconductor device comprising the steps of:

forming a first insulating film over a substrate;

forming a semiconductor layer comprising silicon on said insulating film;

crystallizing the semiconductor layer;

patterning the crystallized semiconductor layer to form one channel formation region;

forming a second insulating film on said channel region,

wherein each of said first and second insulating film is doped with fluorine during the formation thereof.

6. The method according to claim 5 wherein said fluorine is doped by adding a fluorine containing gas to an atmosphere for forming each of the first and second insulating films.

7. A method of manufacturing a semiconductor device comprising the steps of:

forming a first insulating film over a substrate;

forming a semiconductor layer comprising silicon on said insulating film;

crystallizing said semiconductor layer;

patterning the crystallized semiconductor layer to form a channel region;

forming a second insulating film on said channel region,

wherein said first insulating film is doped with fluorine during the formation thereof.

8. The method according to claim 7 wherein said fluorine is doped by adding a fluorine containing gas to an atmosphere for forming the first insulating film.

9. A method of manufacturing a semiconductor device comprising the steps of:

forming an underlying insulating film comprising silicon oxide over a substrate;

forming a semiconductor layer comprising crystalline silicon on said insulating film wherein said semiconductor layer includes a channel region;

forming a gate insulating film on said semiconductor layer; and

forming a gate electrode on said gate insulating film,

wherein said underlying insulating film is doped with fluorine during the formation thereof.

10. The method according to claim 9 wherein said fluorine is doped by adding a fluorine containing gas to an atmosphere for forming the underlying insulating film.

11. A method of manufacturing a semiconductor device comprising the steps of:

forming an underlying insulating film comprising silicon oxide over a substrate;

forming a semiconductor layer comprising crystalline silicon on said insulating film wherein said semiconductor layer includes a channel region;

forming a gate insulating film on said semiconductor layer; and

forming a gate electrode on said gate insulating film,

wherein each of said underlying insulating film and said gate insulating film is doped with fluorine during the formation thereof.

12. The method according to claim 11 wherein said fluorine is doped by adding a fluorine containing gas to an atmosphere for forming each of the underlying insulating film and the gate insulating film.

13. A method of manufacturing a semiconductor device comprising the steps of:

forming a first insulating film over a substrate;

forming a semiconductor layer comprising silicon on said insulating film wherein said semiconductor layer includes a channel region of a thin film transistor;

forming a second insulating film on said semiconductor layer;

wherein each of said first and second insulating films is doped with fluorine during the formation thereof.

14. The method according to claim 13 wherein said fluorine is doped by adding a fluorine containing gas to an atmosphere for forming each of the first and second insulating films.

15. The method according to claim 7 or 13, wherein each of said first and second insulating films comprises silicon oxide.

16. A method of manufacturing a semiconductor device comprising the steps of:

forming a first insulating film over a substrate;

forming a semiconductor layer comprising crystalline silicon on said insulating film wherein said semiconductor layer includes a channel region of a thin film transistor;

forming a second insulating film on said semiconductor layer,

wherein each of said first and second insulating films is doped with fluorine during the formation thereof.

17. The method according to claim 16 wherein said fluorine is doped by adding a fluorine containing gas to an atmosphere for forming each of the first and second insulating films.

23. A method of manufacturing a semiconductor device comprising the steps of:

forming an underlying insulating film comprising silicon oxide over a substrate;

forming a semiconductor layer comprising silicon on said insulating film wherein said semiconductor layer includes a channel region;

forming a gate insulating film on said semiconductor layer; and

forming a gate electrode on said gate insulating film,

wherein said underlying insulating film is doped with fluorine during the formation thereof.