Scalable led with improved current spreading structures

  • US 6,614,056 B1
  • Filed: 11/21/2000
  • Issued: 09/02/2003
  • Est. Priority Date: 12/01/1999
  • Status: Expired due to Term
First Claim
Patent Images

1. A semiconductor LED with current spreading structures, comprising:

  • two or more adjacent layers doped with impurities;

    at least one groove etched through one or more of said layers, exposing a surface on or within one of said layers, said at least one groove beginning at a first edge of said layers and extending toward the opposite second edge;

    a first contact having at least one elongated first conductive finger on said exposed surface within said at least one groove, such that current flows from said contact into said at least one first finger and into said layer with said exposed surface, said first contact and said at least one finger beginning at said first edge and extending toward said second edge; and

    a second contact having at least one elongated second conductive finger on the surface of said adjacent layers such that current flows from said second contact into said at least one conductive second finger and into said adjacent layers, said second contact and said at least one second conductive finger at said second edge and extending toward said first edge.

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