High voltage semiconductor device capable of increasing a switching speed

DC
  • US 6,617,641 B2
  • Filed: 01/31/2002
  • Issued: 09/09/2003
  • Est. Priority Date: 01/31/2001
  • Status: Expired due to Term
First Claim
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1. A semiconductor device comprising:

  • a drain layer of a first conductivity type;

    a buffer layer of a second conductivity type formed above the drain layer;

    a high resistance layer of the second conductivity type formed on the buffer layer;

    a base layer of the first conductivity type formed on the high resistance layer;

    a source layer of the second conductivity type, containing a high concentration of impurities, formed in a surface region of the base layer;

    a gate electrode formed in the base layer with an insulating film interposed therebetween; and

    a low concentration layer formed between the drain layer and the buffer layer, an impurity concentration of the low concentration layer being lower than those of the drain layer and the buffer layer, wherein the drain layer is an impurity diffusion layer, and a total amount of impurities contained in the drain layer is at most 5×

    1014 cm

    2
    .

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