Semiconductor device and method of manufacturing the same

DC
  • US 6,620,653 B2
  • Filed: 09/25/2001
  • Issued: 09/16/2003
  • Est. Priority Date: 09/28/2000
  • Status: Expired due to Term
First Claim
Patent Images

1. A semiconductor device comprising:

  • a first conductive type first base layer comprising a semiconductor substrate;

    a second conductive type collector layer whose thickness is set to 1 μ

    m or less and located on a side of a first surface of said first base layer;

    a first conductive type buffer layer between said first base layer and said collector layer;

    a second conductive type second base layer on a side of a second surface of said first base layer;

    a first conductive type emitter layer in said second base layer; and

    a gate electrode above said second base layer between said emitter layer and said first base layer.

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