Method of making a HF LDMOS structure with a trench type sinker
First Claim
1. A method of manufacturing an HF power device comprising the steps of:
- forming a semiconductor layer as a first conductive type on a semiconductor substrate as the first conductive type;
etching the semiconductor layer by a given depth and forming a first trench;
doping impurity of the first conductive type on the neighborhood of the first trench and forming a first impurity layer as the first conductive type connected to the semiconductor substrate;
burying a conduction film as the first conductive type into the first trench;
etching the semiconductor layer by a given depth and forming a second trench with a constant interval from the first trench;
forming a field oxide film buried into the second trench;
forming gate electrode on a given surface of the semiconductor layer;
forming a source area of a second conductive type on the surface of the semiconductor layer so as to be structurally self-aligned on one side of the gate electrode and be structurally pierced by the conduction film;
forming a drain area as the second conductive type on the surface of the semiconductor layer with a given interval from another side of the gate electrode;
forming an LDD area of the second conductive type on the surface of the semiconductor layer between the drain area and the gate electrode;
forming first metal electrode having a width which reaches the source area and the gate electrode; and
forming second metal electrode electrically connected to the LDD area.
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Abstract
A method of forming an HF power device. The method includes forming a semiconductor layer as a first conductive type on a semiconductor substrate; etching the semiconductor layer forming a first trench; doping an impurity in the neighborhood of the first trench forming a first impurity layer; burying a conduction film into the first trench; etching the semiconductor layer forming a second trench; forming a field oxide film buried into the second trench; forming a gate electrode on a surface of the semiconductor layer; forming a source on the surface of the semiconductor layer; forming a drain area on the surface of the semiconductor layer; forming an LLD area on the surface of the semiconductor layer between the drain area and the gate electrode; forming a first metal electrode; and forming a second metal electrode electrically connected to the LDD area.
21 Citations
7 Claims
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1. A method of manufacturing an HF power device comprising the steps of:
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forming a semiconductor layer as a first conductive type on a semiconductor substrate as the first conductive type;
etching the semiconductor layer by a given depth and forming a first trench;
doping impurity of the first conductive type on the neighborhood of the first trench and forming a first impurity layer as the first conductive type connected to the semiconductor substrate;
burying a conduction film as the first conductive type into the first trench;
etching the semiconductor layer by a given depth and forming a second trench with a constant interval from the first trench;
forming a field oxide film buried into the second trench;
forming gate electrode on a given surface of the semiconductor layer;
forming a source area of a second conductive type on the surface of the semiconductor layer so as to be structurally self-aligned on one side of the gate electrode and be structurally pierced by the conduction film;
forming a drain area as the second conductive type on the surface of the semiconductor layer with a given interval from another side of the gate electrode;
forming an LDD area of the second conductive type on the surface of the semiconductor layer between the drain area and the gate electrode;
forming first metal electrode having a width which reaches the source area and the gate electrode; and
forming second metal electrode electrically connected to the LDD area. - View Dependent Claims (2, 3, 4, 5, 6, 7)
covering the semiconductor layer of the first conductive type containing the second trench with an oxide film; and
forming the field oxide film buried into the second trench by executing a chemical mechanical polishing for the covering film.
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Specification