Semiconductor light emitting element and manufacturing method thereof

• US 6,627,521 B2
• Filed: 10/28/2002
• Issued: 09/30/2003
• Est. Priority Date: 12/21/1999
• Status: Expired due to Fees

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Furukawa, Chisato, Sugawara, Hideto, Suzuki, Nobuhiro
• Primary Examiner(s): CRANE, SARA W
• Application Number:
  US10/281,852
• Publication Number:
  US 20030062531A1
• Time in Patent Office: 337 Days
• Field of Search: 438/269, 438/341, 438/481, 438/22, 438/29, 438/46, 438/47, 438/99, 438/479, 438/496
• US Class Current: 438/481
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48257 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2224/49107 on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/8592 Applying permanent coating, e.g. protective coating
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/501 characterised by the materials, e.g. binder
• CPC Class Codes: H01L 33/508 having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material

Abstract

There is disclosed a semiconductor light emitting element formed by selective growth and being high in light emitting efficiency, in which at least one GaN-based layer grown by ELO is stacked/formed on a sapphire substrate, and a fluorescent substance for converting an ultraviolet light to a visible light is contained in a selective growth mask material layer for use in this case. Since this fluorescent substance converts the ultraviolet light to the visible light, a binding efficiency of the ultraviolet light to the fluorescent substance is enhanced in either one of a center light emitting type and UV light emitting type of light emitting elements. By further containing the fluorescent substance into a passivation film, the efficiency is further enhanced.

Claims

1. A manufacturing method of a semiconductor light emitting element, comprising:

a step of forming a stack of a GaN-based semiconductor layer on an insulating substrate, said step comprising steps of using a fluorescent substance for converting an ultraviolet light to a visible light or a coat material containing the fluorescent substance as a base material to partially stack a mask material for selective growth and using the mask material layer to grow a GaN-based film; and

a step of stacking an active layer for emitting at least the ultraviolet light on this GaN-based semiconductor layer stack.

2. The manufacturing method of the semiconductor light emitting element according to claim 1 wherein the step of stacking said mask material comprises a step of supplying the mask material containing said fluorescent substance together with a solvent, and evaporating a solvent component in the vicinity of 500°

C. to obtain the mask material.

3. The manufacturing method of the semiconductor light emitting element according to claim 1 wherein the mask material containing said fluorescent substance is supplied together with an inorganic binder, heated/sealed and obtained.

4. The manufacturing method of the semiconductor light emitting element according to claim 3 wherein the inorganic binder is silicon oxide.