System and method for electrostatic discharge protection using lateral PNP or PMOS or both for substrate biasing
First Claim
1. An integrated circuit comprising:
- at least one input element; and
a protective circuit coupled to the input element, the protective circuit operable to protect the integrated circuit from electrostatic discharge, the protective circuit comprising;
a lateral NPN transistor coupled to the input element, and operable to activate when the input element voltage exceeds a threshold, the threshold greater than or equal to the ordinary operating voltage of circuitry coupled to the input element; and
a lateral PNP transistor coupled to the input element and to the lateral NPN transistor, the lateral PNP transistor supplying collector current to raise a potential of the base of the lateral NPN transistor responsive to the input element voltage exceeding said threshold.
1 Assignment
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Accused Products
Abstract
The invention comprises a system and method for providing electrostatic discharge protection. In one embodiment of the invention, an integrated circuit (10) comprising at least one input element (20) is protected by a protective circuit (40). The protective circuit (40) is operable to protect the integrated circuit (10) from damage due to electrostatic discharge and may be coupled to the input element (20). The protective circuit (40) comprises a lateral NPN transistor (T1) coupled to the input element (20) and operable to activate when the input element voltage exceeds threshold, the threshold greater than or equal to the ordinary operating voltage of circuitry coupled to the input element (20). The protective circuit (40) also may comprise a lateral PNP transistor (T2) coupled to the input element (20) and to the lateral NPN transistor (T1). The lateral PNP transistor (T2) is operable to aid in raising a potential of the base of the lateral NPN transistor (T1). Alternatively, the protective circuit (40) also may use a PMOS traisistor (P1), or a PMOS transistor (P1) in combination with the lateral NPN transistor (T1), coupled to the input element (20) and to the lateral NPN transistor (T1). The PMOS transistor (P1) is operable to aid in raising the potential of the base of the lateral NPN transistor (T1).
27 Citations
20 Claims
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1. An integrated circuit comprising:
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at least one input element; and
a protective circuit coupled to the input element, the protective circuit operable to protect the integrated circuit from electrostatic discharge, the protective circuit comprising;
a lateral NPN transistor coupled to the input element, and operable to activate when the input element voltage exceeds a threshold, the threshold greater than or equal to the ordinary operating voltage of circuitry coupled to the input element; and
a lateral PNP transistor coupled to the input element and to the lateral NPN transistor, the lateral PNP transistor supplying collector current to raise a potential of the base of the lateral NPN transistor responsive to the input element voltage exceeding said threshold. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A protective circuit for electrostatic discharge protection, comprising:
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a lateral NPN transistor operable to couple to an input element, the lateral NPN transistor further operable to activate when the input element voltage exceeds a threshold, the threshold greater than or equal to the ordinary operating voltage of circuitry coupled to the input element; and
a lateral PNP transistor operable to couple to the input element and to the lateral NPN transistor, the lateral PNP transistor raising a potential of the base of the lateral NPN transistor by supplying collector current responsive to the input element voltage exceeding said threshold. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A method for providing electrostatic discharge protection, comprising:
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coupling internal circuitry of an integrated circuit to an input element;
coupling to the input element a lateral NPN transistor operable to activate when the input element voltage exceeds a threshold, the threshold greater than or equal to the ordinary operating voltage of the internal circuitry; and
coupling to the input element, the internal circuitry of the integrated circuit, and the lateral NPN transistor a lateral PNP transistor operable to aid in raising a potential of the base of the lateral NPN transistor by supplying collector current responsive to the input element voltage exceeding said threshold. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification