High-voltage semiconductor component

  • US 6,630,698 B1
  • Filed: 11/09/2001
  • Issued: 10/07/2003
  • Est. Priority Date: 09/02/1998
  • Status: Active Grant
First Claim
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1. Semiconductor component having a semiconductor body comprising a blocking pn junction, a source zone of a first conductivity type connected to a first electrode and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type connected to a second electrode, the side of the zone of the second conductivity type facing the drain zone forming a first surface, and in the region between the first surface and a second surface located between the first surface and the drain zone, areas of the first and second conductivity type nested in one another, wherein the areas of the first and second conductivity type are variably so doped that near the first surface doping atoms in the area of the second conductivity type predominate over those in the area of the first conductivity type, and near the second surface doping atoms in the area of the first conductivity type predominate over those in the area of the second conductivity type.

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