Linearity radio frequency switch with low control voltage

• US 6,642,578 B1
• Filed: 07/22/2002
• Issued: 11/04/2003
• Est. Priority Date: 07/22/2002
• Status: Expired due to Term

• Current Assignee: Skyworks Solutions Incorporated
• Original Assignee: Anadigics Incorporated (Coherent Corp.)
• Inventors: Arnold, Brian Scott, Cooper, Steven William
• Primary Examiner(s): Abraham, Fetsum
• Application Number:
  US10/201,494
• Time in Patent Office: 470 Days
• Field of Search: 257/341, 327/108, 327/111
• US Class Current: 257/341
• CPC Class Codes: H01P 1/15 by semiconductor devices

Abstract

A field effect transistor used in radio frequency switching applications and having a linear performance characteristic is disclosed. The transistor comprises a plurality of gate lines, a source terminal, a drain terminal, and two feed forward capacitors electrically coupled to the source and drain terminals and the gate line at a plurality of points along the line. An improved transistor preferably includes three or more gate lines to help improve harmonic suppression.

Claims

1. A field effect transistor comprising:

a plurality of gate lines,

a source terminal electrically coupled to a source finger,

a drain terminal electrically coupled to a drain finger,

a first end of a first feed forward capacitor electrically coupled to the source terminal and at a second end electrically coupled to at least one gate line at a first plurality of points along the at least one gate line, and,

a first end of a second feed forward capacitor electrically coupled to the drain terminal and at a second end electrically coupled to the at least one gate line at a second plurality of points along the at least one gate line.

2. The transistor of claim 1, wherein the points in the first plurality of points and the second plurality of points are spaced apart by about 400 microns along the length of a gate line.

3. The transistor of claim 1, wherein the points in the first plurality of points and the second plurality of points are spaced apart by about 200 microns along the length of a gate line.

4. The transistor of claim 1, whereby the capacitance of the first and second feed forward capacitors correspond to a harmonic suppression of second and third harmonics of less than −

30 dBm at 1000 MHz with an applied control voltage of 2.5 Vdc to 3.5 Vdc.

5. The transistor of claim 1, wherein the points in the first plurality of points and the second plurality of points are spaced apart by no more than a distance selected from the group consisting of about 100, about 200, about 250, about 300, about 350, about 380, about 400, about 420, about 450 and about 500 microns along the length of a gate line.

6. The transistor of claim 5, wherein the first plurality of points and the second plurality of points are not on a common gate line.

7. The transistor of claim 6, wherein the first feed forward capacitor is coupled at the second end to a gate line nearest to the source finger and the second feed forward capacitor is coupled at the second end to a gate line nearest to the drain finger.

8. The transistor of claim 7, comprising three or more gate lines.

9. The transistor of claim 5, having a periphery of at least 400 microns.

10. The transistor of claim 9, whereby the capacitance of the first and second feed forward capacitors correspond to an insertion loss of the transistor of less than 0.25 dB at 1000 MHz and 2000 MHz with an applied control voltage of 2.5 Vdc to 3.5 Vdc.

11. The transistor of claim 1, having a substrate material comprising gallium arsenide.

12. The transistor of claim 11, wherein the transistor is prepared using a pseudomorphic high electron mobility process.

13. The transistor of claim 11, wherein the gate line is a Schottky barrier.

14. The transistor of claim 11, wherein the gate line is a junction.

15. The transistor of claim 1, wherein the source and drain terminals are electrically coupled to a plurality of interdigitated source and drain fingers respectively.

16. A method of switching a radio frequency signal having a signal strength of greater than 24 dBm and preferably up to 35.5 dBm, comprising:

providing a field effect transistor as a series switching device, the transistor comprising;

a plurality of gate lines,

a source terminal electrically coupled to a source finger,

a drain terminal electrically coupled to a drain finger,

a first end of a first feed forward capacitor electrically coupled to the source terminal and at a second end electrically coupled to at least one gate line at a first plurality of points along the line, and,

a first end of a second feed forward capacitor electrically coupled to the drain terminal and at a second end electrically coupled to at least one gate line at a second plurality of points along the line.

17. The method of claim 16, wherein the transistor further comprises having the points in the first plurality of points and the second plurality of points spaced apart by no more than a distance selected from the group consisting of about 100, about 200, about 250, about 300, about 380, about 400, about 420, about 450, and about 500 microns along the length of a gate line.

18. The method of claim 16, wherein the transistor further comprises having the points in the first plurality of points and the second plurality of points spaced apart by about 400 microns along the length of a gate line.

19. The method of claim 16, wherein the transistor further comprises having the points in the first plurality of points and the second plurality of points spaced apart by about 200 microns along the length of a gate line.

20. The method of claim 16, comprising the additional step of switching the transistor with a 2.5 Vdc to 3.5 Vdc control signal and wherein the transistor'"'"'s harmonic suppression of second and third harmonics is less than −

30 dBm at 1000 MHz.