Semiconductor nitride pressure microsensor and method of making and using the same

• US 6,647,796 B2
• Filed: 08/07/2001
• Issued: 11/18/2003
• Est. Priority Date: 08/11/2000
• Status: Expired due to Fees

• Current Assignee: California Institute of Technology
• Original Assignee: California Institute of Technology
• Inventors: Beach, Robert A., Strittmatter, Robert P., McGill, Thomas C.
• Primary Examiner(s): Hirshfeld, Andrew H.
• Assistant Examiner(s): FERGUSON SAMRETH, MARISSA LIANA
• Application Number:
  US09/923,628
• Publication Number:
  US 20020066319A1
• Time in Patent Office: 833 Days
• Field of Search: 737/54, 737/20, 737/23, 737/26, 737/77, 737/03, 737/27, 737/21, 257/26, 257/254, 257/419, 257/28
• US Class Current: 73/754
• CPC Class Codes: G01L 9/0055 bonded on a diaphragm

Abstract

An integrated microsensor includes a bowed micromachined membrane coupled to a substrate to define a microcavity therebetween. An integrated strain sensor is coupled to the micromachined membrane to generate a signal responsive to (deformation of the membrane and hence responsive to the pressure of the fluid in the microcavity. A frame is coupled to the peripheral edge of the membrane to assist in enlarging the microcavity. The membrane is composed of a nitride of B, Al, Ga, In, Tl or combinations thereof, or more particularly of p-type GaN where the frame is comprised of n-type GaN. The membrane and frame are fabricated using a photoelectrochemical etching technique. The fabrication of the integrated strain sensor creates stresses across the membrane. The strain sensor comprises an integrated circuit strain-FET. The strain-FET comprises an AlGaN/GaN heterostructure having an AlGaN/GaN interface where deformation of the membrane is coupled as strain to the AlGaN/GaN piezoelectric interface.

Claims

1. An integrated microsensor for sensing pressure of a fluid comprising:

a micromachined membrane having a peripheral edge, which membrane is bowed by stress formed in the membrane during its fabrication;

a substrate coupled to at least a portion of said peripheral edge to define a microcavity between said substrate and membrane to which microcavity said fluid whose pressure is to be sensed is communicated; and

an integrated piezoelectric strain sensor coupled to said micromachined membrane to generate a signal responsive to deformation of said membrane and hence responsive to said pressure of said fluid in said microcavity,

where said integrated strain sensor comprises a strain-FET comprised of an AlGaN/GaN heterostructure having an AlGaN/GaN interface where deformation of said membrane is coupled as strain to said AlGaN/GaN interface.

2. The integrated microsensor of claim 1 where said integrated strain sensor comprises an integrated circuit strain sensor fabricated in an integrated manner with said membrane and substrate.

3. The integrated microsensor of claim 1 where said membrane is composed of a nitride of B, Al, Ga, In, Tl or combinations thereof.

4. The integrated microsensor of claim 1 where said membrane is comprised of p-type GaN.

5. The integrated microsensor of claim 1 further comprising a frame coupled to said peripheral edge of said membrane and where said frame is coupled to said substrate, wherein said frame assists in enlarging said microcavity.

6. The integrated microsensor of claim 5 where said membrane is comprised of p-type GaN and said frame is comprised of n-type GaN.

7. The integrated microsensor of claim 6 where said micromachined membrane is fabricated using a photoelectrochemical etching technique.

8. The integrated microsensor of claim 1 where said micromachined membrane is fabricated using a photoelectrochemical etching technique.

9. The integrated microsensor of claim 1 where said membrane is bowed by fabrication of said integrated strain sensor thereon to create stresses across said membrane.

10. A method of sensing pressure in a microcavity comprising:

providing said microcavity between a substrate and a membrane, wherein said membrane is comprised of a p-type nitride of B, Al, Ga, In, or Tl and wherein said substrate is comprised at least in part of an n-type nitride of B, Al, Ga, In, or Tl, said microcavity formed between said p-type and n-type layers using a photoelectrochemical etching technique;

providing an integrated strain-FET comprised of an AlGaN/GaN heterostructure having an AlGaN/GaN interface where deformation of the membrane is coupled as strain to said AlGaN/GaN interface

coupling the strain FET to said membrane thereby bowing said membrane;

deforming said membrane by a pressure change in said microcavity;

straining said strain FET by deformation of said membrane, where straining said strain FET by deformation of said membrane comprises straining a heterojunction in said strain FET; and

sensing a change in an electrical parameter of said strain FET in response to said pressure change in said microcavity.