Gallium nitride materials and methods

  • US 6,649,287 B2
  • Filed: 12/14/2000
  • Issued: 11/18/2003
  • Est. Priority Date: 12/14/2000
  • Status: Expired due to Term
First Claim
Patent Images

1. A semiconductor material comprising:

  • a silicon substrate;

    a compositionally-graded transition layer formed directly on the silicon substrate; and

    a gallium nitride material layer formed over the transition layer, wherein the semiconductor material forms a FET.

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