Manufacturing method of compound semiconductor wafer

• US 6,649,494 B2
• Filed: 01/25/2002
• Issued: 11/18/2003
• Est. Priority Date: 01/29/2001
• Status: Expired due to Fees

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Tamura, Satoshi, Ogawa, Masahiro, Ishida, Masahiro, Yuri, Masaaki
• Primary Examiner(s): Fourson, George
• Assistant Examiner(s): Maldonado, Julio J.
• Application Number:
  US10/054,844
• Publication Number:
  US 20020102819A1
• Time in Patent Office: 662 Days
• Field of Search: 438/464, 438/479, 438/481, 438/483, 438/977, 438/FOR.484, 438/FOR.485, 438/489, 438/507, 438/503, 438/FOR.476, 438/FOR.477, 438/FOR.293, 438/FOR.246, 438/FOR.249, 438/795, 257/615, 257/21.121, 117/84, 117/104, 117/904, 117/952, 117/103, 117/995
• US Class Current: 438/481
• CPC Class Codes: C30B 25/02 Epitaxial-layer growth
• CPC Class Codes: C30B 25/18 characterised by the substrate
• CPC Class Codes: C30B 29/40 AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
• CPC Class Codes: C30B 29/403 AIII-nitrides
• CPC Class Codes: C30B 29/406 Gallium nitride
• CPC Class Codes: C30B 29/60 characterised by shape
• CPC Class Codes: H01L 21/02389 Nitrides
• CPC Class Codes: H01L 21/02395 Arsenides
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02639 Preparation of substrate for selective deposition
• CPC Class Codes: H01L 21/02647 Lateral overgrowth
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: Y10S 117/915 Separating from substrate

Abstract

A protector film is formed on the surface of a substrate to cover at least the side surface thereof. Then, a compound semiconductor film including nitrogen is grown through epitaxial growth on the substrate at an exposed portion. Then, the substrate and the compound semiconductor film are separated from each other by irradiation of laser light, polishing of the substrate, etching, cutting, etc. Consequently, the resulting compound semiconductor film is used as a free-standing wafer.

Claims

1. A manufacturing method of a compound semiconductor wafer, comprising:

a step (a) of forming a closed-ring protector film covering a part of a top surface and a side surface of a substrate;

a step (b) of conducting, after said step (a), epitaxial lateral growth of a compound semiconductor film including nitrogen in a composition thereof on the top surface of said substrate at a region where it is not covered with said protector film; and

a step (c) of removing said substrate after said step (b),

wherein said protector film formed in said step (a) has a function of interfering with the epitaxial lateral growth of said compound semiconductor film formed in said step (b).

2. The manufacturing method of a compound semiconductor wafer according to claim 1, wherein, in said step (a), said protector film is formed so as to cover at least the side surface of said substrate entirely.

3. The manufacturing method of a compound semiconductor wafer according to claim 1, wherein, in said step (a), said protector film is formed so as to cover only an edge part of the top surface of said substrate.

4. The manufacturing method of a compound semiconductor wafer according to claim 3, wherein, in said step (a), said protector film is formed so that a ring width of said protector film is larger than a film thickness of said compound semiconductor film.

5. The manufacturing method of a compound semiconductor wafer according to claim 1, wherein said protector film is made of at least one film selected from the group consisting of a silicon dioxide film, a silicon nitride film, a silicon oxynitride film, and a refractory metal film.

6. The manufacturing method of a compound semiconductor wafer according to claim 1, wherein, in said step (c), said substrate is removed by means of polishing.

7. The manufacturing method of a compound semiconductor wafer according to claim 1, wherein:

in said step (b), said compound semiconductor film is made of a compound semiconductor having an absorption edge wavelength longer than an absorption edge wavelength of said substrate; and

in said step (c), said compound semiconductor film is decomposed by irradiating light having an intermediate wavelength between the absorption edge wavelength of said substrate and the absorption edge wavelength of said compound semiconductor film from said substrate side, so that said substrate and said compound semiconductor film are separated from each other.

8. The manufacturing method of a compound semiconductor wafer according to claim 1, wherein, in said step (c), said substrate is removed by means of etching.

9. The manufacturing method of a compound semiconductor wafer according to claim 1, wherein a back surface of said compound semiconductor film is polished after said step (c).

10. The manufacturing method of a compound semiconductor wafer according to claim 1, wherein, in said step (b), a compound semiconductor film including N and at least one element selected from the group consisting of Ga, Al, B, As, In, P and Sb in a composition thereof is formed as said compound semiconductor film.

11. A manufacturing method of a compound semiconductor wafer, comprising:

a step (a) of conducting epitaxial growth of a compound semiconductor film including nitrogen in a composition thereof on a substrate;

a step (b) of removing at least a portion of said compound semiconductor film located on an upper side surface of said substrate; and

a step (c) of removing said substrate after said step (b).

12. The manufacturing method of a compound semiconductor wafer according to claim 11, wherein, in said step (b), at least the portion of said semiconductor film located on the side surface of said substrate is removed by means of polishing.

13. The manufacturing method of a compound semiconductor wafer according to claim 11, wherein, in said step (b), said substrate and said compound semiconductor film located inside the side surface is cut in a closed-ring shape.

14. The manufacturing method of a compound semiconductor wafer according to claim 11, wherein, in said step (b), an inside portion of said compound semiconductor film from the side surface is removed.

15. The manufacturing method of a compound semiconductor wafer according to claim 11, wherein, in said step (c), said substrate is removed by means of polishing.

16. The manufacturing method of a compound semiconductor wafer according to claim 11, wherein:

in said step (b), said compound semiconductor film is made of a compound semiconductor having an absorption edge wavelength longer than an absorption edge wavelength of said substrate; and

in said step (c), said compound semiconductor film is decomposed by irradiating light having an intermediate wavelength between the absorption edge wavelength of said substrate and the absorption edge wavelength of said compound semiconductor film from said substrate side, so that said substrate and said compound semiconductor film are separated from each other.

17. The manufacturing method of a compound semiconductor wafer according to claim 11, wherein, in said step (c), said substrate is removed by means of etching.

18. The manufacturing method of a compound semiconductor wafer according to claim 11, wherein a back surface of said compound semiconductor film is polished after said step (c).

19. The manufacturing method of a compound semiconductor wafer according to claim 11, wherein, in said step (a), a compound semiconductor film including N and at least one element selected from the group consisting of Ga, Al, B, As, In, P and Sb in a composition thereof is formed as said compound semiconductor film.

20. A manufacturing method of a compound semiconductor wafer, comprising:

a step (a) of depositing a film covering a top surface and a side surface of a substrate;

a step (b) of removing said film until at least the top surface of said substrate is exposed, thereby flattening said substrate and said film at the top to form a closed-ring protector film covering at least the side surface of said substrate;

a step (c) of conducting, after said step (b), epitaxial growth of a compound semiconductor film including nitrogen in a composition thereof on the top surface of said substrate at a region where it is not covered with said protector film; and

a step (d) of removing said substrate after said step (c),

wherein said protector film formed in the step (b) has a function of interfering with the epitaxial growth of the compound conductor film formed in said step (c).

21. The manufacturing method of a compound semiconductor wafer according to claim 20, wherein:

said step (a) is preceded by an additional step of removing a peripheral portion of said substrate to form a notch; and

in said step (b), said protector film is formed so as to cover the side surface and the notch of said substrate.