Sequential chemical vapor deposition

CAFC
  • US 6,652,924 B2
  • Filed: 05/24/2001
  • Issued: 11/25/2003
  • Est. Priority Date: 08/16/1996
  • Status: Expired due to Term
First Claim
Patent Images

1. A process of growing a thin film by a sequential vapor deposition process, comprising the steps of:

  • placing a part in a chamber;

    removing gases from the chamber;

    exposing the part to a gaseous first reactant, including an element of the thin film to be formed, wherein the first reactant adsorbs on the part in a self-limiting manner;

    removing gases from the chamber;

    exposing the part, coated with the first reactant, to a gaseous second reactant of radicals, wherein the radicals convert the first reactant on the part to one or more elements, wherein a conductive or insulating thin film is formed; and

    removing gases from the chamber.

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