In situ control with lubricant and tracking

• US 6,656,023 B1
• Filed: 09/20/2001
• Issued: 12/02/2003
• Est. Priority Date: 11/06/1998
• Status: Expired due to Term

• Current Assignee: Semcon Tech LLC (IPNav)
• Original Assignee: Beaver Creek Concepts, Inc.
• Inventors: Molnar, Charles J.
• Primary Examiner(s): Hail, III, Joseph J.
• Assistant Examiner(s): Ojini, Anthony
• Application Number:
  US09/956,687
• Time in Patent Office: 803 Days
• Field of Search: 451/5, 451/41, 451/36, 451/37, 451/287, 451/288, 438/690-693, 438/745, 438/753, 438/756, 438/757, 216/38, 216/88, 216/89, 156/345
• US Class Current: 451/41
• CPC Class Codes: B24B 37/013 Devices or means for detecting lapping completion
• CPC Class Codes: B24B 37/042 operating processes therefor
• CPC Class Codes: B24B 49/04 involving measurement of the workpiece at the place of grinding during grinding operation
• CPC Class Codes: B24B 49/16 taking regard of the load

Abstract

A method of using a finishing element having a finishing surface including lubricant for finishing semiconductor wafers is described. The organic lubricants with preferred in situ control can improve control of the coefficient of friction and help reduce unwanted defects. The method uses finishing control subsystem having a multiplicity of operative process sensors along with tracked information to improve in situ control of finishing. Differential lubricating film methods are described to differentially finish semiconductor wafers. Planarization and localized finishing can be improved using differential lubricating boundary layer methods of finishing with improved real time control.

Claims

1. A method of finishing a tracked semiconductor wafer having a semiconductor wafer surface and a finishing cycle time, the method comprising the steps of:

providing the tracked semiconductor wafer having tracked information;

providing a finishing element finishing surface;

providing an organic lubricant to an operative finishing interface comprising the interface formed between the finishing element finishing surface and the semiconductor wafer surface;

providing a finishing control subsystem having;

at least three operative process sensors which include at least two operative friction sensors for sensing in situ process information;

access to the tracked information; and

a processor to evaluate the in situ process information and the tracked information;

applying an operative finishing motion in the operative finishing interface forming in the operative finishing interface a uniform region having an organic lubrication and wherein the uniform region has a coefficient of friction; and

changing a plurality of control parameters in response to an evaluation of both the in situ process information sensed with the at least three operative-process sensors and the tracked information, wherein changing the control parameters changes the coefficient of friction in the uniform region having the organic lubrication during at least a portion of the finishing cycle time.

2. The method of finishing according to claim 1 wherein changing the plurality of control parameters comprises controlling and adjusting at least 4 times a minimum of two process control parameters, which changes a tangential force of friction in at least the uniform region of the operative finishing interface at least two times during the finishing cycle time.

3. The method of finishing according to claim 2 before applying the operative finishing motion having the additional step of:

providing a finishing composition which is free of abrasive particles.

4. The method of finishing according to claim 2 before applying the operative finishing motion having the additional step of:

providing a finishing composition which is free of abrasive particles;

and wherein applying the operative finishing motion comprises applying an operative finishing motion in the operative finishing interface and induces tribochemical reactions on the semiconductor wafer surface.

5. The method of finishing according to claim 1 wherein changing the plurality of control parameters comprises the evaluation which includes comparing the in situ process information obtained from the at least two operative friction sensors and then controlling and adjusting at least 20 times a minimum of two process control parameters, which changes a tangential force of friction in at least the uniform region of the operative finishing interface at least 5 times during the finishing cycle time.

6. The method of finishing according to claim 1 wherein changing the plurality of control parameters comprises using a mathematical expression to evaluate the in situ process information and the tracked information.

7. The method of finishing according to claim 1 wherein:

changing a plurality of control parameters comprises using a mathematical expression to evaluate the in situ process information and the tracked information; and

the plurality of control parameters are changed at least four times during the finishing cycle time.

8. The method of finishing according to claim 1 wherein:

changing the plurality of control parameters comprises using a mathematical expression to evaluate the in situ process information and the tracked information; and

the plurality of control parameters are changed at least twenty times during the finishing cycle time.

9. The method of finishing according to claim 1 before applying the operative finishing motion having the additional step of:

providing a finishing composition which is free of abrasive particles.

10. The method of finishing according to claim 1 before applying the operative finishing motion having the additional step of:

providing a finishing composition which chemically reacts preferentially with a portion of the semiconductor wafer surface.

11. The method of finishing according to claim 1 before applying the operative finishing motion having the additional step of:

providing a finishing composition which is free of abrasive particles;

and wherein applying the operative finishing motion comprises applying an operative finishing motion between the finishing element finishing surface and the semiconductor wafer surface and induces tribochemical reactions on the semiconductor wafer surface.

12. A method of finishing a tracked semiconductor wafer having a semiconductor wafer surface and a finishing cycle time, the method comprising the steps of:

providing the tracked semiconductor wafer having tracked information;

providing a finishing element finishing surface;

providing an organic lubricant to an operative finishing interface comprising the interface formed between the finishing element finishing surface and the semiconductor wafer surface;

providing a finishing control subsystem having;

at least three operative process sensors for sensing in situ process information;

access to the tracked information; and

a processor to evaluate the in situ process information and the tracked information;

applying an operative finishing motion in the operative finishing interface forming in the operative finishing interface a first uniform region having a first organic lubrication and a second uniform region having a second organic lubrication and wherein the first and the second uniform regions have different coefficients of friction; and

changing a plurality of control parameters in response to an evaluation of both the in situ process information sensed with the at least three operative process sensors and the tracked information, wherein changing the control parameters changes the coefficient of friction in at least one uniform region during at least a portion of the finishing cycle time.

13. The method of finishing according to claim 12 wherein changing the plurality of control parameters comprises controlling and adjusting at least 10 times a minimum of two process control parameters, which changes a tangential force of friction in the at least one uniform region of the operative finishing interface at least 5 times during the finishing cycle time.

14. The method of finishing according to claim 12 wherein:

changing the plurality of control parameters comprises using a mathematical expression to evaluate the in situ process information and the tracked information; and

wherein

the plurality of control parameters are changed at least ten times during the finishing cycle time.

15. The method of finishing according to claim 12 wherein:

changing the plurality of control parameters comprises using a mathematical expression to evaluate the in situ process information and the tracked information having a multiplicity of data types; and

wherein

the plurality of control parameters are changed at least ten times during the finishing cycle time.

16. The method of finishing according to claim 12 before applying the operative finishing motion having the additional step of:

providing a finishing composition which is free of abrasive particles.

17. The method of finishing according to claim 12 applying the operative finishing motion having the additional step of:

providing a finishing composition which is free of abrasive particles;

and wherein applying the operative finishing motion comprises applying an operative finishing motion in the operative finishing interface and induces tribochemical reactions on the semiconductor wafer surface.

18. The method of finishing according to claim 12 wherein the tracked information includes tracked information for prior manufacturing steps of the semiconductor wafer.

19. The method of finishing according to claim 12 wherein the tracked information includes tracked information for future manufacturing steps of the semiconductor wafer.

20. The method of finishing according to claim 12 wherein the tracked information includes tracked information for prior and future manufacturing steps of the semiconductor wafer.

21. The method of finishing according to claim 12 wherein the finishing element finishing surface includes inorganic abrasive particles.

22. The method of finishing according to claim 12 wherein the finishing element finishing surface comprises a multiphase polymeric finishing surface.

23. The method of finishing according to claim 12 wherein the evaluation of both the in situ process information sensed with the at least three operative process sensors and the tracked information includes feedback information.

24. A method of finishing a tracked semiconductor wafer having a semiconductor wafer surface and a finishing cycle time, the method comprising the steps of:

providing the tracked semiconductor wafer having tracked information;

providing a finishing element finishing surface;

providing an organic lubricant to an operative finishing interface comprising the interface formed between the finishing element finishing surface and the semiconductor wafer surface;

providing a finishing control subsystem having;

at least three operative process sensors for sensing in situ process information;

access to the tracked information; and

a processor to evaluate the in situ process information and the tracked information;

applying an operative finishing motion in the operative finishing interface forming in the operative finishing interface a first uniform region having a first organic lubrication and a second uniform region having a second organic lubrication and wherein the first and the second uniform regions have different coefficients of friction;

evaluating both the in situ process information sensed with the at least three operative process sensors and the tracked information; and

changing a plurality of control parameters at least 4 times to change the coefficient of friction in at least one of the uniform regions at least 4 times during the finishing cycle time.

25. The method of finishing according to claim 24 wherein:

changing the plurality of control parameters comprises using a mathematical expression to evaluate the in situ process information having a multiplicity of data and the tracked information having a multiplicity of data types; and

wherein

the plurality of control parameters are changed at least ten times during the finishing cycle time.

26. The method of finishing according to claim 24 before applying the operative finishing motion having the additional step of:

providing a finishing composition which is free of abrasive particles.

27. The method of finishing according to claim 24 before applying the operative finishing motion having the additional step of:

providing a finishing composition which is free of abrasive particles;

and wherein applying the operative finishing motion comprises applying an operative finishing motion in the operative finishing interface and induces tribochemical reactions on the semiconductor wafer surface.

28. The method of finishing according to claim 24 whererin the tracked information includes tracked information for prior manufacturing steps of the semiconductor wafer.

29. The method of finishing according to claim 24 wherein the tracked information includes tracked information for future manufacturing steps of the semiconductor wafer.

30. The method of finishing according to claim 24 wherein the tracked information includes tracked information for a prior and a future manufacturing step of the semiconductor wafer.

31. The method of finishing according to claim 24 wherein evaluating both the in situ process information sensed with the at least three operative process sensors and the tracked information comprises evaluating both the in situ process information sensed with the at least three operative process sensors and the tracked information which includes using feedback information.

32. A method of finishing a tracked semiconductor wafer having a semiconductor wafer surface and a finishing cycle time, the method comprising the steps of:

providing the tracked semiconductor wafer having tracked information;

providing a finishing element finishing surface;

providing a reactive lubricant to an operative finishing interface comprising the interface formed between the finishing element finishing surface and the semiconductor wafer surface;

providing a finishing control subsystem having;

at least five operative process sensors including at least three operative friction

sensors for sensing in situ process information;

access to the tracked information; and

a processor to evaluate the in situ process information and the tracked information;

applying an operative finishing motion in the operative finishing interface forming at least one uniform region having a reactive lubrication and a coefficient of friction;

evaluating both the in situ process information sensed with the at least five operative process sensors and the tracked information; and

changing a plurality of control parameters at least 4 times to change the coefficient of friction in at least one of the uniform regions at least 4 times during the finishing cycle time.

33. The method of finishing according to claim 32 wherein the step of evaluating includes comparing the in situ process information obtained from at least three operative friction sensors.

34. The method of finishing according to claim 32 before applying the operative finishing motion having the additional step of:

providing a finishing composition which is free of abrasive particles.

35. A method of finishing a tracked semiconductor wafer having a semiconductor wafer surface and a uniform region and a finishing cycle time, the method comprising the steps of:

providing the tracked semiconductor wafer having tracked information;

providing a finishing element finishing surface;

providing a finishing aid to an operative finishing interface comprising the interface formed between the finishing element finishing surface and the semiconductor wafer surface;

providing a finishing control subsystem having;

at least three operative process sensors for sensing in situ process information;

access to the tracked information; and

a processor to evaluate the in situ process information and the tracked information;

applying an operative finishing motion in the operative finishing interface forming a coefficient of friction in the uniform region of the semiconductor wafer surface having the finishing aid; and

evaluating both the in situ process information sensed with the at least three operative process sensors and the tracked information; and

changing with the finishing control subsystem a plurality of control parameters to change finishing at least 4 times during at least a portion of the finishing cycle time.

36. The method of finishing according to claim 35 wherein the finishing aid comprises a reactive finishing aid.

37. The method of finishing according to claim 35 wherein the finishing aid comprises a reactive finishing aid which reacts with at least a portion of the semiconductor wafer surface.

38. The method of finishing according to claim 35 wherein the finishing aid comprises a reactive finishing aid which chemically reacts with at least a portion of the semiconductor wafer surface changing the finishing rate in angstroms per minute when compared to the finishing rate under identical finishing conditions but in the absence of the reactive finishing aid.

39. The method of finishing according to claim 38 wherein:

the in situ process information has a multiplicity of data types;

the tracked information has a multiplicity of data types; and

evaluating both the in situ process information and the tracked information comprises using a mathematical expression and wherein the plurality of control parameters are changed at least twenty times during the finishing cycle time.

40. The method of finishing according to claim 39 before applying the operative finishing motion having the additional step of:

providing a finishing composition which is free of abrasive particles.

41. The method of finishing according to claim 38 wherein the tracked information includes tracked information for a prior manufacturing step of the semiconductor wafer and wherein the finishing aid comprises an organic lubricant.

42. The method of finishing according to claim 38 wherein the tracked information includes tracked information for a future manufacturing step of the semiconductor wafer and wherein the finishing aid comprises an organic lubricant.

43. The method of finishing according to claim 38 wherein the tracked information includes tracked information for a prior and a future manufacturing step of the semiconductor wafer and wherein the finishing aid comprises an organic lubricant.

44. The method of finishing according to claim 35 before applying the operative finishing motion having the additional step of:

providing a finishing composition which is free of abrasive particles.

45. The method of finishing according to claim 35 wherein the tracked information includes tracked information for a prior manufacturing step of the semiconductor wafer and the finishing aid comprises a reactive organic lubricant.

46. The method of finishing according to claim 35 wherein the tracked information includes tracked information for a future manufacturing step of the semiconductor wafer and the finishing aid comprises a reactive organic lubricant.

47. The method of finishing according to claim 35 wherein the tracked information includes tracked information for a prior and a future manufacturing step of the semiconductor wafer and the finishing aid comprises a reactive organic lubricant.

48. A method of finishing a tracked semiconductor wafer having a semiconductor wafer surface and a uniform region and a finishing cycle time, the method comprising the steps of:

providing the tracked semiconductor wafer having tracked information;

providing a finishing element finishing surface;

providing an organic lubricant to an operative finishing interface comprising the interface formed between the finishing element finishing surface and the semiconductor wafer surface;

providing a finishing control subsystem having;

at least five operative process sensors for sensing in situ process information;

access to the tracked information; and

a processor to evaluate the in situ process information and the tracked information;

applying an operative finishing motion in the operative finishing interface forming an organic lubrication in the uniform region of the semiconductor wafer surface and wherein the uniform region has a coefficient of friction; and

evaluating both the in situ process information sensed with the at least five operative process sensors and the tracked information; and

changing a plurality of control parameters at least 10 times to change the coefficient of friction at least 4 times during the finishing cycle time in at least the uniform region having the organic lubrication.

49. The method of finishing according to claim 48 wherein the tracked information includes tracked information for prior manufacturing steps of the semiconductor wafer.

50. The method of finishing according to claim 48 wherein the tracked information includes tracked information for future manufacturing steps of the semiconductor wafer.

51. The method of finishing according to claim 48 wherein the tracked information includes tracked information for prior and future manufacturing steps of the semiconductor wafer.

52. The method of finishing according to claim 48 wherein evaluating both the in situ process information sensed with the at least five operative process sensors and the tracked information comprises evaluating both the in situ process information sensed with the at least five operative process sensors and the tracked information which includes using feedback information.

53. The method of finishing according to claim 48 wherein the finishing element finishing surface includes inorganic abrasive particles.

54. The method of finishing according to claim 48 wherein the finishing element finishing surface comprises a multiphase polymeric finishing surface.

55. The method of finishing according to claim 48 wherein the finishing element finishing surface includes organic abrasive particles.