Tunable laser source with integrated optical amplifier

• US 6,658,035 B1
• Filed: 07/12/2000
• Issued: 12/02/2003
• Est. Priority Date: 09/02/1999
• Status: Expired due to Term

• Current Assignee: Lumentum Operations, LLC (Lumentum Holdings Inc.)
• Original Assignee: Agility Communications Incorporated (Lumentum Holdings Inc.)
• Inventors: Fish, Gregory, Coldren, Larry, Mason, Thomas Beck
• Primary Examiner(s): Ip, Paul
• Assistant Examiner(s): Zahn, Jeffrey N.
• Application Number:
  US09/614,375
• Time in Patent Office: 1,238 Days
• Field of Search: 372/50, 372/43
• US Class Current: 372/50.22
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01S 5/0262 Photo-diodes, e.g. transceiver devices, bidirectional devices H01S5/0265 takes precedence
• CPC Class Codes: H01S 5/0265 Intensity modulators intra-cavity modulators H01S5/0625
• CPC Class Codes: H01S 5/0427 for applying modulation to the laser
• CPC Class Codes: H01S 5/06251 Amplitude modulation
• CPC Class Codes: H01S 5/06253 Pulse modulation
• CPC Class Codes: H01S 5/06256 with DBR-structure
• CPC Class Codes: H01S 5/1209 Sampled grating
• CPC Class Codes: H01S 5/1243 by other means than a jump in the grating period, e.g. bent waveguides
• CPC Class Codes: H01S 5/3414 by vacancy induced interdiffusion
• CPC Class Codes: H01S 5/50 Amplifier structures not provided for in groups H01S5/02 - H01S5/30
• CPC Class Codes: H01S 5/5018 using two or more amplifiers or multiple passes through the same amplifier
• CPC Class Codes: H04B 10/2914 using lumped semiconductor optical amplifiers [SOA]

Abstract

A laser assembly includes an epitaxial structure formed on a substrate. A separately controllable tunable laser resonator and external optical amplifier are formed in the epitaxial structure. At least a portion of the laser and amplifier share a common waveguide, which may have non-uniform optical or geometrical properties along the waveguide centerline or across a normal to the centerline.

Claims

1. A diode laser assembly, comprising:

substrate;

an epitaxal structure formed on the substrate;

a laser formed in the epitaxial structure, the laser including first and second reflectors, a gain section and a phase section, the gain section and the phase section each being positioned between the first and second reflectors to produce a tunable laser output therefrom; and

an amplifier formed in the epitaxial structure, at least a portion of the laser and amplifier sharing a common waveguide, the tunable laser output being coupled to the amplifier along the common waveguide, and the amplifier generating an optical signal in response to the coupled tunable laser output, wherein at least a portion of the waveguide is curved to reduce reflection from an output facet.

2. The laser assembly of claim 1 wherein the common waveguide has non-uniform optical properties along its centerline.

3. The laser assembly of claim 1 wherein the common waveguide has non-uniform cross-sectional area along its centerline.

4. The laser assembly of claim 1 wherein the common waveguide has non-uniform curvature along its centerline.

5. The laser assembly of claim 1 wherein the common waveguide has non-uniform optical properties normal to its centerline.

6. The assembly of claim 1, wherein the amplifier includes at least one active region and at least one passive region.

7. The assembly of claim 6, wherein the waveguide extends through an active region and a passive region.

8. The assembly of claim 7, wherein a portion of the waveguide in the amplifier is curved.

9. The assembly of claim 7, wherein at least a portion of the waveguide in a passive region of the amplifier is curved.

10. The assembly of claim 7, wherein a portion of the waveguide in the amplifier is curved and the amplifier includes a flared waveguide section.

11. The assembly of claim 7, wherein an interface between the active region and the passive region is oblique to a centerline of the waveguide.

12. The assembly of claim 7, wherein an interface between the active region and the passive region is substantially normal to a centerline of the waveguide.

13. The assembly of claim 7, wherein an end of the waveguide in the amplifier terminates at an oblique angle to an output facet.

14. The assembly of claim 6, wherein the waveguide includes a waveguide mode adapter.

15. The assembly of claim 6, wherein the first active region has a oblique distal face.

16. The assembly of claim 1, wherein the laser has a multi-active region gain medium.

17. The assembly of claim 1, wherein the epitaxial structure has areas of differing optical properties.

18. The assembly of claim 1, wherein the waveguide includes active section.

19. The assembly of claim 18, wherein the active section of the waveguide is positioned in the first active section of the amplifier.

20. The assembly of claim 18, where the active section of the waveguide is positioned in the second active section of the amplifier.

21. The assembly of claim 1, wherein at least a portion of the waveguide is non-parallel to an axis of the laser'"'"'s cavity.

22. The assembly of claim 1, wherein the amplifier includes a plurality of independently controllable active regions.

23. The assembly of claim 22, wherein a first and a second active region are separated by a passive region.

24. The assembly of claim 23, wherein the first active region has a oblique distal face.

25. The assembly of claim 23, wherein the second active region has an oblique proximal face.

26. The assembly of claim 23, wherein the oblique distal face of the first active region is parallel to the oblique proximal face of the second active region.

27. The assembly of claim 23, wherein the second active region has a oblique distal face.

28. The assembly of claim 27, wherein the proximal face and the distal face of the second region are parallel.

29. The assembly of claim 1, wherein a width of the laser output is independent of a width of the waveguide at an output of the amplifier.

30. The assembly of claim 1, wherein the laser includes a mode selection element.

31. The assembly of claim 30, wherein the mode selection element is a controllable phase shifting element.

32. The assembly of claim 1, wherein the at least one of the first and second reflectors is tunable.

33. The assembly of claim 32, wherein at least one of the first and second reflectors is a distributed reflector.

34. The assembly of claim 32, wherein both of the first and second reflectors are distributed reflectors.

35. The assembly of claim 32, wherein at least one of the first and second reflectors is a distributed Bragg reflector.

36. The assembly of claim 32, wherein each of the first and second reflectors is a distributed Bragg reflector.

37. The assembly of claim 32, wherein a maximum reflectivity of at least one of the first and second reflectors is tunable.

38. The assembly of claim 32, wherein a maximum reflectivity of each of the first and second reflectors is tunable.

39. The assembly of claim 32, wherein the maximum reflectivities of each of the first and second reflectors are tunable relative to each other.

40. The assembly of claim 32, wherein the laser includes an attenuator and at least one amplifier positioned outside of the laser.

41. The assembly of claim 32, wherein the laser includes a controllable amplifier positioned outside of the laser.

42. The assembly of claim 32, wherein the laser includes a controllable attenuator positioned outside of the laser.

43. The assembly of claim 1, wherein at least a portion of the waveguide is flared.

44. The assembly of claim 43, wherein a flared portion of the waveguide is in an active region.

45. The assembly of claim 43, wherein a flared portion of the waveguide is in a passive region.

46. The assembly of claim 1, wherein the optical signal is tunable within a range of at least 15 nm.

47. A diode laser assembly, comprising:

a first semiconductor layer in an epitaxial structure;

a second semiconductor layer formed in the epitaxial structure, the first and second semiconductor layers having different dopings;

a waveguide layer formed between the first and second semiconductor layers, the first waveguide layer including a waveguide, a first reflector and a second reflector;

an optically active medium disposed between the first and second reflectors, the first and second reflectors defining a laser cavity and producing a tunable laser output; and

an amplifier formed in the epitaxial structure, wherein the laser cavity and the amplifier are optically aligned, the tunable laser output being coupled into the amplifier along the waveguide, and the amplifier generating an optical signal in response to the coupled tunable laser output, wherein at least a portion of the waveguide is curved to reduce reflections from an output facet.

48. The assembly of claim 47, wherein a distal portion of the waveguide in the amplifier is curved.

49. The assembly of claim 47, wherein a distal end of the waveguide in the amplifier terminates at an oblique angle to an output facet.

50. The assembly of claim 47, wherein at least a portion of the waveguide is non-parallel to an axis of the laser cavity.

51. The assembly of claim 47, wherein at least a portion of the waveguide is flared.

52. The assembly of claim 47, wherein the waveguide includes an active section.

53. The assembly of claim 52, wherein the active section of the waveguide is positioned in the first active section of the amplifier.

54. The assembly of claim 52, wherein the active section of the waveguide is positioned in the second active section of the amplifier.

55. The assembly of claim 47, wherein the amplifier includes a first active region and a passive region.

56. The assembly of claim 55, wherein the amplifier includes a second active region.

57. The assembly of claim 55, wherein the first and second active regions are separated by a passive region.

58. The assembly of claim 57, wherein the first active region has an oblique distal face.

59. The assembly of claim 58, wherein the second active region has au oblique proximal face.

60. The assembly of claim 59, wherein the oblique distal face of the first active region is parallel to the oblique proximal face of the second active region.

63. The assembly of claim 55, wherein the waveguide extends through at least a portion of the amplifier.

64. The assembly of claim 55, wherein the first active region has an oblique distal face.

65. The assembly of claim 55, wherein the waveguide extends through the first active region and the passive region.

66. The assembly of claim 55, wherein the waveguide includes a mode adapter.

67. The assembly of claim 47, wherein at least one of the first and second reflectors is tunable.

68. The assembly of claim 67, wherein both of the first and second reflectors is a distributed reflector.

69. The assembly of claim 67, wherein at least one of the first and second reflectors is a distributed Bragg reflector.

70. The assembly of claim 67, wherein each of the first and second reflectors is a distributed Bragg reflector.

71. The assembly of claim 67, wherein a maximum reflectivity of at least one of the first and second reflectors is tunable.

72. The assembly of claim 67, wherein a maximum reflectivity of each of the first and second reflectors is tunable.

73. The assembly of claim 67, wherein the maximum reflectivities of each of the first and second reflectors are tunable relative to each other.

74. The assembly of claim 67, wherein the laser includes a controllable amplifier positioned outside of the laser.

75. The assembly of claim 67, wherein the laser includes a controllable attenuator positioned outside of the laser.

76. The assembly of claim 67, wherein the laser includes an attenuator and at least one amplifier positioned outside of the resonant cavity.

77. The assembly of claim 67, wherein at least one of the first and second reflectors is a distributed reflector.

78. The assembly of claim 47, wherein the laser includes a mode selection element.

79. The assembly of claim 78, wherein the mode selection element is a controllable phase shifting element.

80. The assembly of claim 47, wherein the optical signal is tunable within a range of at least 15 nm.

81. The assembly of claim 47, wherein a width of the tunable laser output is independent of a width of the waveguide at an output of the amplifier.

82. The assembly of claim 47, wherein the epitaxial structure has areas of differing optical properties.

61. The assembly of clam 59, wherein the second active region has an oblique distal face.

62. The assembly of claim 61, wherein the proximal face and the distal face of the second region are parallel.