High breakdown voltage semiconductor device

DC
  • US 6,667,515 B2
  • Filed: 01/24/2002
  • Issued: 12/23/2003
  • Est. Priority Date: 01/26/2001
  • Status: Expired due to Term
First Claim
Patent Images

1. A high breakdown voltage semiconductor device including an active area, and a surrounding region surrounding the active area, comprising:

  • a first semiconductor layer of a first conductivity type disposed as a semiconductor active layer common to the active area and the surrounding region, the first semiconductor layer having first and second main surfaces opposite to each other;

    a second semiconductor layer of a second conductivity type formed in the first main surface of the first semiconductor layer in the active area;

    a third semiconductor layer of the first conductivity type formed in a surface of the second semiconductor layer;

    a fourth semiconductor layer disposed on or in the second main surface of the first semiconductor layer in the active area;

    a gate electrode facing, through a gate insulating film, a portion of the second semiconductor layer between the first semiconductor layer and the third semiconductor layer;

    a first main electrode electrically connected to the second semiconductor layer and the third semiconductor layer;

    a second main electrode electrically connected to the fourth semiconductor layer;

    a ring layer of the second conductivity type formed in the first main surface of the first semiconductor layer and surrounding the active area at a position in the surrounding region adjacent to the active area;

    a first low-resistivity layer formed in a surface of the ring layer and having a resistivity lower than that of the ring layer, the first low-resistivity layer comprising a metal or polycrystalline silicon of the second conductivity type and having a resistivity of from 1×

    10

    6
    to 1×

    10

    3
    Ω

    cm; and

    a connection electrode electrically connecting the first low-resistivity layer to the first main electrode.

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