Method and apparatus for determining and/or improving high power reliability in thin film resonator devices, and a thin film resonator device resultant therefrom

• US 6,674,291 B1
• Filed: 09/26/2000
• Issued: 01/06/2004
• Est. Priority Date: 10/30/2000
• Status: Expired due to Term

• Current Assignee: Avago Technologies International Sales Pte Limited (Broadcom, Inc.)
• Original Assignee: Agere Systems Guardian Corp. (Broadcom, Inc.)
• Inventors: Gammel, Peter Ledel, Herbsommer, Juan A., Safar, Hugo F., Barber, Bradley Paul, Wong, Yiu-Huen
• Primary Examiner(s): Le, N.
• Assistant Examiner(s): Nguyen, Vincent Q.
• Application Number:
  US09/669,681
• Time in Patent Office: 1,197 Days
• Field of Search: 324/76.49, 324/618, 324/520, 324/727, 324/76.51, 324/633, 324/652, 324/655, 324/668, 324/675, 324/682, 324/708, 333/187, 333/188, 333/189, 333/202, 333/234
• US Class Current: 324/520
• CPC Class Codes: G01R 31/2824 testing of oscillators or resonators
• CPC Class Codes: H01L 2224/8121 using a reflow oven
• CPC Class Codes: H01L 2224/81815 Reflow soldering
• CPC Class Codes: H01L 24/81 using a bump connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H03H 3/02 for the manufacture of piezoelectric or electrostrictive resonators or networks H03H3/08 takes precedence
• CPC Class Codes: H03H 9/02125 of parasitic elements
• CPC Class Codes: H03H 9/172 Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
• CPC Class Codes: Y10T 29/42 Piezoelectric device making
• CPC Class Codes: Y10T 29/49144 by metal fusion
• CPC Class Codes: Y10T 29/49155 Manufacturing circuit on or in base
• CPC Class Codes: Y10T 29/49156 with selective destruction of conductive paths

Abstract

The effects of electromigration have been shown to lead to damage of metal electrodes of electronic devices such as thin film resonator (TFR) devices in only a few hours, for a test input power that is within the operational range of these devices. It has been determined that this failure is sensitive to the frequency of the input power. The present invention provides a method and apparatus for determining high power reliability in electronic devices, so as to enable an accurate determination of the failure time of the electronic device, and hence projected lifetime. This determination is independent from the frequency of an input power applied to the electronic device as part of the method for testing the device. Based on the above results, a TFR device has been developed, which includes a protective or electromigration-reducing layer such as titanium being deposited atop an electrode of the device. The TFR device with the modified electrode structure can operate at higher power levels and has a longer operational lifetime than what is currently available.

Claims

1. A method for determining reliability of an electronic device having an operational frequency band, comprising:

applying an input power at a frequency to the device;

changing the frequency of the applied input power in a specified frequency range, so that the input power is applied to the operational frequency band of the device; and

determining a measure of reliability for the device.

2. The method of claim 1, wherein said measure of reliability is determined independent from the frequency of the input power.

3. The method of claim 1, wherein said step of changing includes sweeping the frequency of the input power across a range of 1800-1900 MHz.

4. The method of claim 3, wherein said frequency of the input power is modulated with a 10 KHz triangular wave.

5. The method of claim 4, wherein said triangular wave is provided by a function generator to modulate the frequency of the input power.

6. The method of claim 1, wherein said step of determining includes monitoring an ac voltage output while the frequency of the input voltage is continuously swept in frequency.

7. The method of claim 1, wherein said step of determining includes momentarily interrupting the frequency modulation of the input power to perform an accurate through power measurement of the input power.

8. The method of claim 7, wherein said measure of reliability is a time to device failure that is determined by at least a function of the measured through power, or by detecting electromigration with optical means, or by determining roughness of device electrodes with an SEM or AFM microscope.

9. The method of claim 1, wherein said electronic device is held at a temperature different from the ambient temperature of the environment in which the method is performed.

10. The method of claim 1, wherein said electronic device is a thin film resonator device (TFR).

11. The method of claim 10, wherein said TFR device is configured in a resonator and/or filter structure.

12. The method of claim 1, wherein said operational frequency band includes a resonant pole and a resonant zero frequency.

13. An apparatus for determining reliability of an electronic device having an operational frequency band, comprising:

an RF source for applying an input power at a frequency to the device;

a function generator for changing the frequency of the applied input power in a specified frequency range, so that the input power is applied to the operational frequency band of the device; and

a multimeter for measuring the power through the device so as to determine a time to device failure.

14. The apparatus of claim 13, further comprising a first directional coupler and power meter connected between the RF source and device, and configured so as to read the input power.

15. The apparatus of claim 13, wherein the input power is supplied to the device through an RF amplifier.

16. The apparatus of claim 14, further comprising a second directional coupler and diode power meter connected between the device and multimeter, and configured so that voltage through the device is read on the multimeter.

17. The apparatus of claim 13, wherein said function generator modulates the frequency of the input power with a 10 KHz triangular wave, so that the frequency of the input power is swept across a range of 1800-1900 MHz.

18. The apparatus of claim 13, wherein the multimeter monitors ac voltage through the device while the frequency of the input power is continuously swept in frequency by the function generator.

19. The apparatus of claim 13, wherein frequency modulation provided by the function generator is momentarily interrupted to perform an accurate through power measurement of the input power in order to determine failure time of the device.

20. The apparatus of claim 13, wherein said electronic device is configured within an enclosure that is held at a temperature different than the ambient temperature at which the apparatus operates.

21. The apparatus of claim 13, wherein said electronic device is a thin film resonator device (TFR).

22. The apparatus of claim 21, wherein said TFR device is configured in a resonator and/or filter structure.

23. The apparatus of claim 13, wherein said operational frequency band includes a resonant pole and a resonant zero frequency.