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Defect detection in semiconductor devices

  • US 6,686,757 B1
  • Filed: 09/30/1999
  • Issued: 02/03/2004
  • Est. Priority Date: 09/30/1999
  • Status: Expired due to Fees
First Claim
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1. A method for testing an integrated circuit, wherein the circuit has circuitry in a circuit side opposite a back side, the method comprising:

  • removing substrate from the back side and exposing a target region;

    applying an energy source at the target region, thereby generating a plurality response signals from the integrated circuit;

    detecting the response signals from in the integrated circuit via at least one detector;

    correlating the detected response signals with a reference signal to determine the amount of deviation from the reference signal; and

    identifying the type of defect in the circuit as a function of the deviation between the detected response signals and the reference signal and as function of the energy source used to generate the response signal.

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