Lateral semiconductor component in thin-film SOI technology

• US 6,693,327 B2
• Filed: 02/12/2002
• Issued: 02/17/2004
• Est. Priority Date: 02/12/2001
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: EUPEC Europaeische Gesellschaft fuer Leistungshalbleiter mbH
• Inventors: Rudolf, Ralf, Boguszewicz, Viktor, Buckhorst, Rolf, Michalzik, Frank, Priefert, Dirk
• Primary Examiner(s): TRAN, THIEN F
• Application Number:
  US10/074,605
• Publication Number:
  US 20020121664A1
• Time in Patent Office: 735 Days
• Field of Search: 257/343,347,490,495,367,368
• US Class Current: 257/347
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688
• CPC Class Codes: H01L 29/7393 Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
• CPC Class Codes: H01L 29/861 Diodes

Abstract

A lateral semiconductor element (10) in thin-film SOI technology comprises an insulator layer (14) which rests on a substrate (12) and is buried under a thin silicon film (16), on top of which the source, or anode, contact (18) and the drain, or cathode, contact (22) are mounted. The anode contact (18) and the cathode contact (22) each lie over separate shield regions (28,30) within substrate (12), with the anode contact (18) being electrically connected with substrate (12).

Claims

1. A lateral semiconductor component in thin-film SOI technology, comprising:

a substrate,

an insulating layer which rests on the substrate,

a thin film of doped, non-insulating silicon, said thin silicon film being layered directly on top of the insulating layer,

separate shield regions within the substrate,

a source/anode contact mounted on top of the insulating layer, the source/anode contact lying over one of the shield regions and electrically connected with the substrate, and

a drain/cathode contact mounted on top of the insulating layer, the drain/cathode contact lying over another one of the shield regions.

2. The lateral semiconductor component of claim 1, wherein an electrical connection of the source/anode contact with the substrate is formed by an electric component.

3. The lateral semiconductor component of claim 1, wherein the drain/cathode contact is electrically connected with the substrate.

4. The lateral semiconductor component of claim 1, wherein the semiconductor component is a voltage-proof resistor.

5. The lateral semiconductor component of claim 1, wherein the semiconductor component is an IGBT.

6. The lateral semiconductor component of claim 1, wherein an electrical connection of the source/anode contact with the substrate is formed by a metallic contact.

7. The lateral semiconductor component according to claim 6, wherein a number of transistors and diodes are connected together to form a bridge driver circuit.

8. The lateral semiconductor component of claim 1, wherein the semiconductor component is a transistor.

9. The lateral semiconductor component according to claim 8, wherein the semiconductor component is a level-shift transistor and is integrated in a driver circuit with a vertical power component.

10. The lateral semiconductor component of claim 1, wherein the semiconductor component is a diode.

11. The lateral semiconductor component according to claim 10, wherein the semiconductor component is an SOI diode and is integrated as a decoupling diode in an evaluation circuit with a vertical power element.

12. The lateral semiconductor component of claim 1, wherein the shield regions of the source/anode and drain/cathode contacts are insulated from each other by a buried edge structure disposed in-between them.

13. The lateral semiconductor component of claim 12, wherein the buried edge structure is formed by a floating field ring structure.

14. The lateral semiconductor component of claim 12, wherein the buried edge structure is formed by a VLD structure.

15. The lateral semiconductor component of claim 12, wherein the buried edge structure is formed by JTE structure.