Electroless deposition of doped noble metals and noble metal alloys
First Claim
1. A semiconductor device structure comprising:
- a substrate with an active device region thereon; and
at least one layer comprising a doped metal or a doped metal alloy, said doped metal layer or doped metal alloy layer co-deposited by electroless plating and disposed over said substrate, said at least one layer configured and located on said substrate so as to prevent oxygen diffusion into said active device region.
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Accused Products
Abstract
A method for forming an oxidation barrier including at least partially immersing a semiconductor device structure in an electroless plating bath that includes at least one metal salt and at least one reducing agent. The reaction of the at least one metal salt with the at least one reducing agent simultaneously deposits metal and a dopant thereof. The oxidation barrier may be used to form conductive structures of semiconductor device structures, such as a capacitor electrode, or may be formed adjacent conductive or semiconductive structures of semiconductor device structures to prevent oxidation thereof. The oxidation barrier is particularly useful for preventing oxidation during the formation and annealing of a dielectric structure from a high dielectric constant material, such as Ta2O5 or BST.
32 Citations
46 Claims
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1. A semiconductor device structure comprising:
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a substrate with an active device region thereon; and
at least one layer comprising a doped metal or a doped metal alloy, said doped metal layer or doped metal alloy layer co-deposited by electroless plating and disposed over said substrate, said at least one layer configured and located on said substrate so as to prevent oxygen diffusion into said active device region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. An oxidation-resistant semiconductor device structure comprising:
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a substrate having a first conductive or semiconductive component thereon;
a second conductive component above said first conductive or semiconductive component; and
at least one oxidation barrier layer co-deposited by electroless plating and comprising a doped metal or a doped metal alloy adjacent said second conductive component, said at least one oxidation barrier layer configured to at least prevent oxygen diffusion into said substrate. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28)
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29. A stacked capacitor structure comprising:
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a substrate including an active device region;
an oxygen diffusion barrier co-deposited by electroless deposition and comprising at least one layer of doped metal or doped metal alloy;
a conductive layer above said active device region and proximate said oxygen diffusion barrier; and
at least one dielectric layer above said conductive layer. - View Dependent Claims (30, 31, 32, 33, 34, 35, 36, 37, 38, 39)
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- 40. An electroless plating bath for depositing a conductive layer on a semiconductor device structure, comprising an aqueous metal solution including at least one metal salt and at least one reducing agent that will deposit a doped conductive layer that prevents oxygen diffusion when contacted with a semiconductor device structure.
- 44. An electroless plating bath for depositing a conductive layer on a semiconductor device structure, comprising an aqueous metal solution including at least one metal salt and at least one of dimethylamineborane, potassium borohydride, sodium borohydride, and hydrazine that will deposit a doped conductive layer that prevents oxygen diffusion when contacted with a semiconductor device structure.
Specification