Semiconductor device and method of manufacturing the same

DC
  • US 6,709,950 B2
  • Filed: 07/11/2001
  • Issued: 03/23/2004
  • Est. Priority Date: 07/27/1995
  • Status: Expired due to Term
First Claim
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1. A method of manufacturing a semiconductor device comprising:

  • a first step of forming a trench isolation on a semiconductor substrate, the trench isolation having a top surface at a higher level than a surface of the semiconductor substrate;

    a second step of forming a gate insulating film on an active area surrounded by the trench isolation on the semiconductor substrate;

    a third step of forming a gate electrode on the gate insulating film and forming an interconnection on the trench islation;

    after the third step, a fourth step of forming an underlying film on the entire surface of the semiconductor substrate;

    a fifth step of forming an interlayer insulating film on the underlying film;

    a sixth step of forming a hole stretching over at least a part of the active area, at least a part of the interconnection and at least a part of the trench islation providided therebetween by selectively removing the interlayer insulating film and the underlying film; and

    a seventh step of forming a buried conductive layer by filling the hole with a conductive material, wherein the underlying film is made of an insulating material having high etching selectivity against the interlayer insulating film in a dry etching process.

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