Field emission tips and methods for fabricating the same

• US 6,713,312 B2
• Filed: 05/08/2002
• Issued: 03/30/2004
• Est. Priority Date: 04/26/2000
• Status: Expired due to Fees

• Current Assignee: Round Rock Research LLC
• Original Assignee: Micron Technology, Inc.
• Inventors: Huang, Zhaohui, Tang, Sanh D., Blalock, Guy T.
• Primary Examiner(s): Zarneke, David A.
• Application Number:
  US10/141,586
• Publication Number:
  US 20020127750A1
• Time in Patent Office: 692 Days
• Field of Search: 438/20, 438/34, 438/673, 438/712, 438/713, 445/24, 445/49-51, 313/309
• US Class Current: 438/20
• CPC Class Codes: H01J 1/304 Field-emissive cathodes
• CPC Class Codes: H01J 1/3044 Point emitters
• CPC Class Codes: H01J 2201/30446 characterised by the emitter material
• CPC Class Codes: H01J 31/127 using large area or array sources, i.e. essentially a source for each pixel group

Abstract

A method for fabricating field emitters from a conductive or semiconductive substrate. A layer of low work function material may be formed on the substrate. Emission tips that include such a low work function material may have improved performance. An etch mask appropriate for forming emission tips is patterned at desired locations over the substrate and any low work function material thereover. An anisotropic etch of at least the substrate is conducted to form vertical columns therefrom. A sacrificial layer may then be formed over the vertical columns. A facet etch of each vertical column forms an emission tip of the desired shape. If a sacrificial layer was formed over the vertical columns prior to formation of emission tips therefrom, the remaining material of the sacrificial layer may be utilized to facilitate the removal of any redeposition materials formed during the facet etch.

Claims

1. A method for fabricating an emitter tip, comprising facet etching at least one upper corner of a raised structure comprising a semiconductive or conductive material and at least one sidewall oriented substantially perpendicular to an upper surface of said raised structure.

2. The method according to claim 1, wherein said facet etching is effected by one of a reactive ion etcher, a magnetically enhanced reactive ion etcher, a low pressure sputter etcher, and a high density source etcher.

3. The method according to claim 1, wherein said facet etching comprises using an etchant gas comprising at least one of helium, argon, krypton, and xenon.

4. The method according to claim 1, wherein said facet etching comprises forming the emitter tip to have an apex with a lateral width of less than about 100 nm.

5. The method according to claim 1, wherein said facet etching comprises forming the emitter tip to have an apex with a lateral width of less than about 50 nm.

6. The method according to claim 1, further comprising forming said raised structure on a substrate.

7. The method according to claim 6, wherein said forming comprises anisotropically etching a layer or structure comprising at least one of semiconductive material and conductive material.

8. The method according to claim 7, wherein said forming is effected through a mask that defines a location and a cross-sectional shape of said raised structure.

9. The method according to claim 7, further comprising disposing a layer comprising a low work function material over said layer or structure comprising at least one of semiconductive material and conductive material.

10. The method according to claim 9, wherein said forming comprises forming said raised structure to include an upper portion comprising said low work function material.

11. The method according to claim 10, wherein said facet etching comprises forming the emitter tip to include an apex that at least partially comprises said low work function material.

12. The method according to claim 9, wherein said disposing comprises disposing a layer comprising at least one of AlTiSi_x, TiSi_xN, TiN, Cr₃Si, TaN, Ce, and a cermet comprising at least one of Cr₃SiO—

SiO₂, Cr₃Si—

MgO, Au—

SiO₂, and Au—

MgO over said layer or structure comprising at least one of semiconductive material and conductive material.

13. The method according to claim 9, wherein said disposing is effected following said forming and before said facet etching.

14. The method according to claim 1, further comprising disposing a layer comprising sacrificial material over at least one of said raised structure and a layer or structure from which said raised structure is formed before said facet etching.

15. The method according to claim 14, further comprising removing remaining portions of said sacrificial material following said facet etching.

16. The method according to claim 15, wherein said removing comprises exposing said remaining portions of said sacrificial material to a solution comprising hydrofluoric acid.

17. A method for fabricating a field emission array, comprising:

facet etching at least upper corners of a plurality of raised structures to form emitter tips therefrom, each of said plurality of raised structures comprising a semiconductive or conductive material and including an upper surface and at least one sidewall oriented substantially perpendicular to said upper surface.

18. The method of claim 17, wherein said facet etching is effected by one of a reactive ion etcher, a magnetically enhanced reactive ion etcher, a low pressure sputter etcher, and a high density source etcher.

19. The method of claim 17, wherein said facet etching comprises using an etchant gas comprising at least one of helium, argon, krypton, and xenon.

20. The method of claim 17, wherein said facet etching comprises forming at least some of said emitter tips to have apices with lateral widths of less than about 100 nm.

21. The method of claim 17, wherein said facet etching comprises forming at least some of said emitter tips to have apices with lateral widths of less than about 50 nm.

22. The method of claim 17, further comprising:

forming said plurality of raised structures on a substrate.

23. The method of claim 22, wherein said forming comprises anisotropically etching a layer or structure comprising at least one of semiconductive material and conductive material.

24. The method of claim 23, wherein said forming is effected through a mask that defines a location and a cross-sectional shape of each raised structure of said plurality of raised structures.

25. The method of claim 23, further comprising disposing a layer comprising a low work function material over said layer or structure comprising at least one of semiconductive material and conductive material.

26. The method of claim 25, wherein said forming comprises forming said plurality of raised structures to include upper portions comprising said low work function material.

27. The method of claim 26, wherein said facet etching comprises forming each emitter tip of said emitter tips to include an apex that at least partially comprises said low work function material.

28. The method of claim 25, wherein said disposing comprises disposing a layer comprising at least one of AlTiSi_x, TiSi_xN, TiN, Cr₃Si, TaN, Ce, and a cermet comprising at least one of Cr₃Si—

SiO₂, Cr₃Si—

MgO, Au—

SiO₂, and Au—

MgO.

29. The method of claim 25, wherein said disposing is effected following said forming and before said facet etching.

30. The method of claim 17, further comprising:

disposing a layer comprising sacrificial material over at least one of said plurality of raised structures and a layer or structure comprising at least one of semiconductive material and conductive material from which said plurality of raised structures is formed before said facet etching.

31. The method of claim 30, further comprising removing remaining portions of said sacrificial material following said facet etching.

32. The method of claim 31, wherein said removing comprises exposing said remaining portions of said sacrificial material to a solution comprising hydrofluoric acid.

33. A method for fabricating a field emission display, comprising:

fabricating a cathode, including;

facet etching at least upper corners of a plurality of raised structures to form emitter tips therefrom, each of said plurality of raised structures comprising a semiconductive or conductive material and including an upper surface and at least one sidewall oriented substantially perpendicular to said upper surface;

fabricating a grid over said cathode with apices of said emitter tips being exposed therethrough;

positioning an anode display screen over and spaced apart from said cathode and said grid;

creating a substantial vacuum between said anode display screen and said grid; and

associating a voltage source with said cathode, said grid, and said anode display screen.

34. A method for fabricating an emitter tip, comprising:

dry etching at least an upper corner of a raised structure comprising a semiconductive or conductive material and including an upper surface and at least one sidewall oriented substantially perpendicular to said upper surface at a faster rate than substantially planar surfaces of said raised structure are etched.

35. The method of claim 34, wherein said dry etching is effected at a rate of at least about four times faster than dry etching of said substantially planar surfaces.