Uniformly doped source/drain junction in a double-gate MOSFET

• US 6,716,690 B1
• Filed: 03/12/2003
• Issued: 04/06/2004
• Est. Priority Date: 03/12/2003
• Status: Active Grant

• Current Assignee: Advanced Micro Devices, Inc.
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Yu, Bin, Wang, HaiHong, An, Judy Xilin
• Primary Examiner(s): Niebling, John F.
• Assistant Examiner(s): ISAAC, STANETTA D
• Application Number:
  US10/385,692
• Time in Patent Office: 391 Days
• Field of Search: 438/149, 438/151, 438/197, 438/230, 438/231, 438/232, 438/303, 438/311, 438/479, 438/495, 438/514, 438/519, 438/682, 438/914
• US Class Current: 438/197
• CPC Class Codes: H01L 21/26586 characterised by the angle between the ion beam and the crystal planes or the main crystal surface
• CPC Class Codes: H01L 29/458 for thin film silicon, e.g. source or drain electrode
• CPC Class Codes: H01L 29/66795 with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/785 having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: Y10S 438/914 Doping

Abstract

Multiple dopant implantations are performed on a FinFET device to thereby distribute the dopant in a substantially uniform manner along a vertical depth of the FinFET in the source/drain junction. Each of the multiple implantations may be performed at different tilt angles.

Claims

1. A method for forming a MOSFET comprising:

forming a source, a drain, and a fin structure on an insulating layer, portions of the fin structure acting as a channel for the MOSFET;

performing a first implantation with a dopant of the source and the drain; and

performing a second implantation with the dopant of the source and the drain, the second implantation being performed at a tilt angle different than a tilt angle of the first implantation and in a same region of the source and drain as the first implantation.

2. The method of claim 1, further comprising:

performing a third implantation with the dopant at a tilt angle different than the tilt angle of the first implantation and the second implantation and in the same region of the source and drain as the first and second implantations.

3. The method of claim 2, wherein the second and third tilt angles are complimentary to one another.

4. The method of claim 1, further comprising:

performing one or more additional implantations with the dopant at tilt angles that are different than the tilt angles of the first implantation and the second implantation and in the same region of the source and drain as the first and second implantations.

5. The method of claim 1, wherein the dopant is an n-type dopant.

6. The method of claim 1, wherein the dopant is a p-type dopant.

7. The method of claim 1, wherein the first implantation deposits the dopant at a tilt angle of approximately zero degrees.

8. The method of claim 7, wherein the second implantation deposits the dopant at a tilt angle of approximately 45 degrees.

9. The method of claim 8, wherein the first implantation is performed using an ion beam implantation technique at approximately 20 keV and the second implantation is performed using an ion beam implantation technique at approximately 15 keV.

10. The method of claim 1, further comprising:

forming SiO₂ spacers around the fin structure prior to performing the first implantation and the second implantation.

11. The method of claim 1, wherein the MOSFET is a FinFET.

12. A method comprising:

forming a source, a drain, and a fin structure on an insulating layer, portions of the fin structure acting as a channel for the MOSFET; and

implanting the source and the drain with a dopant using a plurality of implantation steps in which each of the plurality of implantation steps is performed at a different tilt angle and in a same region of the source and drain, wherein

the plurality of implantation steps cause a concentration of the dopant to be substantially uniform along a vertical depth of a junction of the source and the drain.

13. The method of claim 12, wherein the plurality of implantation steps includes three implantation steps.

14. The method of claim 12, wherein a first of the plurality of implantation steps is performed at a tilt angle of approximately zero degrees.

15. The method of claim 14, wherein a second of the implantation steps is performed at a tilt angle of approximately 45 degrees.

16. The method of claim 15, wherein a third of the implantation steps is performed at a tilt angle complimentary to the tilt angle of the second of the implantation steps.

17. The method of claim 15, wherein the first implantation step is performed using an ion beam implantation technique at approximately 20 keV and the second implantation step is preformed using an ion beam implantation technique at approximately 15 keV.

18. The method of claim 12, wherein the dopant is one of As⁺ or P⁺.

19. The method of claim 12, wherein the dopant is one of B or BF₂.

20. The method of claim 12, further comprising:

forming SiO₂ spacers around the fin structure prior to the implanting the source and the drain.