Trench gate type semiconductor device and fabricating method of the same

  • US 6,717,210 B2
  • Filed: 11/07/2002
  • Issued: 04/06/2004
  • Est. Priority Date: 09/02/2002
  • Status: Active Grant
First Claim
Patent Images

1. A trench gate type semiconductor device comprising:

  • a first semiconductor layer having first and second main surfaces;

    a second semiconductor layer of a first conductivity type as formed on said first main surface of said first semiconductor layer;

    a third semiconductor layer of a second conductivity type as formed on said second semiconductor layer;

    a fourth semiconductor layer of the first conductivity type as formed at a surface of said third semiconductor layer;

    a gate electrode having a polycrystalline silicon layer being buried in a trench formed to a depth reaching said second semiconductor layer from a surface of said fourth semiconductor layer with a gate insulating film interposed therebetween and having an upper end portion protruding upwardly from a trench upper end opening while having its width greater than a width of said trench and a metal silicide film formed at an upper surface and side surfaces of said upper end portion of said polycrystalline silicon layer;

    a first main electrode in contact with both said fourth semiconductor layer and said third semiconductor layer; and

    a second main electrode formed at said second main surface of said first semiconductor layer.

View all claims

    Thank you for your feedback