Edge-emitting nitride-based laser diode with p-n tunnel junction current injection

• US 6,724,013 B2
• Filed: 12/21/2001
• Issued: 04/20/2004
• Est. Priority Date: 12/21/2001
• Status: Expired due to Term

• Current Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Original Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Inventors: Kiesel, Peter, Van de Walle, Christian G., Kneissl, Michael A.
• Primary Examiner(s): Zarabian, Amir
• Assistant Examiner(s): Soward, Ida M.
• Application Number:
  US10/024,417
• Publication Number:
  US 20030116767A1
• Time in Patent Office: 851 Days
• Field of Search: 257/79, 257/209, 257/411, 257/200, 257/199, 257/196, 257/183, 257/94, 257/96, 257/97, 257/102, 257/103, 257/189, 257/13, 257/14, 438/47, 438/94
• US Class Current: 257/79
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01S 5/0421 characterised by the semiconducting contacting layers electrodes H01S5/0425
• CPC Class Codes: H01S 5/3095 Tunnel junction
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Abstract

A p-n tunnel junction between a p-type semiconductor layer and a n-type semiconductor layer provides current injection for an edge-emitting nitride based semiconductor laser structure. The amount of p-type material in the nitride based semiconductor laser structure can be minimized, with attendant advantages in electrical, thermal, and optical performance, and in fabrication.

Claims

1. A semiconductor laser structure comprising:

a substrate;

a plurality of III-V nitride semiconductor layers formed on said substrate, at least one of said plurality of III-V nitride semiconductor layers forms an active region over a n-type cladding layer;

a first semiconductor layer being p-type nitride material formed on the active region, the first semiconductor layer including a blocking layer to prevent leakage of electrons injected into the active layer from leaking out of the blocking layer, the first semiconductor layer further including a hole injection layer over the blocking layer, the bandgap of the blocking layer being larger than the bandgap of the hole injection layer;

a second semiconductor layer formed on said first semiconductor layer, said second semiconductor layer being an n-type nitride, a tunnel junction disposed between said first semiconductor layer and said second semiconductor layer for injecting current into said active region, said blocking layer preventing electrons from leaking from said blocking layer to the tunnel junction; and

wherein a sufficient forward bias is applied to said active region to cause lasing from an edge of said semiconductor laser structure.

2. The semiconductor laser structure of claim 1 wherein said first semiconductor layer is a p-type III-V nitride semiconductor, and said second semiconductor layer is an n-type III-V nitride semiconductor.

3. The semiconductor laser structure of claim 1 wherein said first semiconductor layer is a p-type III-V nitride semiconductor, and said second semiconductor layer is an n-type oxide semiconductor.

4. The semiconductor laser structure of claim 1 wherein a plurality of said plurality of III-V nitride semiconductor layers are n-type.

5. The semiconductor laser structure of claim 1 wherein said tunnel junction means is reverse biased.

6. The semiconductor laser structure of claim 1 wherein one of said plurality of III-V nitride semiconductor layers is a electron blocking layer formed on said active region, said electron blocking layer is a p-type III-V nitride semiconductor, and said first semiconductor layer is formed on said electron blocking layer.

7. The semiconductor laser structure of claim 1 wherein said substrate is sapphire, silicon carbide, spinel, aluminum nitride or gallium nitride.

8. A semiconductor laser comprising:

a substrate;

a first n-type III-V compound nitride layer deposited over the substrate;

an active region formed over the first n-type III-V compound nitride layer;

a p-type III-V compound nitride layer deposited over the active region, the p-type III-V compound nitride layer including a blocking layer with a bandgap larger than the bandgap of the first n-type III-V compound nitride layer to prevent electrons injected into the active region from leaking past the blocking layer and reaching a tunnel junction, the p-type III-V compound nitride layer further including a hole-injection layer over the blocking layer, the hole-injection layer having a bandgap smaller than the bandgap of the blocking layer;

a second n-type III-V compound nitride layer formed over the p-type III-V compound nitride layer the second n-type III-V compound nitride layer forming a tunnel diode with the hole-injection layer.

9. The semiconductor laser of claim 8 wherein the interface between the p-type III-V compound nitride layer and the second n-type III-V compound nitride layer is reverse biased.

10. The semiconductor laser of claim 9 wherein the interface between the p-type III-V compound nitride layer and the first n-type III-V compound nitride layer is forward biased.

11. The semiconductor laser of claim 8 wherein the III-V compound nitride layer is a gallium nitride layer.

12. The semiconductor laser of claim 8 wherein substrate is a sapphire substrate.

13. The semiconductor laser of claim 8 wherein the active layer is an intrinsic.