Plasma etching apparatus with focus ring and plasma etching method

• US 6,726,799 B2
• Filed: 11/07/2001
• Issued: 04/27/2004
• Est. Priority Date: 12/07/2000
• Status: Expired due to Fees

• Current Assignee: Oki Semiconductor Company Limited (ROHM Co., Ltd.)
• Original Assignee: Semiconductor Leading Edge Technologies, Inc.
• Inventors: Koike, Osamu
• Primary Examiner(s): Hassanzadeh, Parviz
• Application Number:
  US09/986,044
• Publication Number:
  US 20020072240A1
• Time in Patent Office: 902 Days
• Field of Search: 156/345.24, 156/345.51, 118/695, 118/712, 118/728, 438/710, 438/714
• US Class Current: 156/345.24
• CPC Class Codes: H01J 37/32642 Focus rings

Abstract

A focus ring is disposed along a circumference of a semiconductor substrate on a lower electrode. A sensor measures a position of an upper surface of the focus ring, and a drive mechanism 6 drives the focus ring vertically. A controller adjusts the position of the upper surface of the focus ring to a desired position by driving the drive mechanism on the basis of a result of measurement by the sensor.

Claims

1. A plasma etching apparatus comprising:

a lower electrode supporting a semiconductor substrate;

a focus ring disposed along a circumference of said semiconductor substrate;

a sensor for measuring a position of an upper surface of said focus ring;

a drive mechanism for driving said focus ring vertically; and

a controller for adjusting the position of the upper surface of said focus ring by driving said drive mechanism on the basis of a result of measurement by said sensor.

2. The plasma etching apparatus according to claim 1,

wherein said sensor can measure the position of the upper surface of said focus ring at a plurality of points of said focus ring, and

said drive mechanism can change the position of the upper surface of said focus ring at a plurality of points of said focus ring.

3. The plasma etching apparatus according to claim 2,

wherein said controller is configured for adjusting the position of said upper surface of said focus ring to maintain constant a length from a surface of said semiconductor substrate to said upper surface of said focus ring at a plurality of locations of said upper surface.

4. The plasma etching apparatus according to claim 2,

wherein said controller is configured for adjusting the position of said upper surface of said focus ring to maintain constant the uniformity of the etching rate of a surface of said semiconductor substrate.

5. The plasma etching apparatus according to claim 1,

wherein said controller is configured for adjusting the position of said upper surface of said focus ring to maintain constant a length from a surface of said semiconductor substrate to said upper surface of said focus ring.

6. The plasma etching apparatus according to claim 1,

wherein said controller is configured for adjusting the position of said upper surface of said focus ring to maintain constant the uniformity of the etching rate of a surface of said semiconductor substrate.