POWER SEMICONDUCTOR SWITCHING DEVICES, POWER CONVERTERS, INTEGRATED CIRCUIT ASSEMBLIES, INTEGRATED CIRCUITRY, POWER CURRENT SWITCHING METHODS, METHODS OF FORMING A POWER SEMICONDUCTOR SWITCHING DEVICE, POWER CONVERSION METHODS, POWER SEMICONDUCTOR SWITCHING DEVICE PACKAGING METHODS, AND METHODS OF FORMING A POWER TRANSISTOR

  • US 6,737,301 B2
  • Filed: 07/12/2001
  • Issued: 05/18/2004
  • Est. Priority Date: 07/13/2000
  • Status: Expired due to Term
First Claim
Patent Images

1. A method of forming a power semiconductor switching device configured to conduct power currents comprising:

  • forming at least one thousand planar field effect transistors individually having a source, a drain and a gate adjacent to a common surface of a semiconductive substrate;

    electrically coupling the sources of the field effect transistors;

    electrically coupling the drains of the field effect transistors;

    electrically coupling the gates of the field effect transistors; and

    forming body diode circuitry intermediate the electrically coupled sources and the electrically coupled drains.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×