Method and apparatus for depositing films

• US 6,758,948 B2
• Filed: 08/26/2002
• Issued: 07/06/2004
• Est. Priority Date: 02/25/2000
• Status: Expired due to Fees

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Johnson, Wayne L.
• Primary Examiner(s): VERSTEEG, STEVEN H
• Application Number:
  US10/227,526
• Publication Number:
  US 20030042131A1
• Time in Patent Office: 680 Days
• Field of Search: 204/298.03, 204/298.06, 204/298.08, 204/298.09, 204/298.11, 204/192.12
• US Class Current: 204/192.12
• CPC Class Codes: C23C 14/3407 Cathode assembly for sputtering apparatus, e.g. Target
• CPC Class Codes: C23C 14/345 using substrate bias
• CPC Class Codes: C23C 14/358 Inductive energy
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/34 operating with cathodic sputtering H01J37/36 takes precedence ; methods of cathodic sputtering C23C14/34

Abstract

A method and apparatus for performing physical vapor deposition of a layer or a substrate, composed of a deposition chamber enclosing a plasma region for containing an ionizable gas; an electromagnetic field generating system surrounding the plasma region for inductively coupling an electromagnetic field into the plasma region to ionize the gas and generate and maintain a high density, low potential plasma; a source of deposition material including a solid target constituting a source of material to be deposited onto the substrate; a unit associated with the target for electrically biasing the target in order to cause ions in the plasma to strike the target and sputter material from the target; and a substrate holder for holding the substrate at a location to permit material sputtered from the target to be deposited on the substrate.

Claims

1. An apparatus for performing physical vapor deposition of a layer on a substrate, said apparatus comprising:

a deposition chamber enclosing a plasma region for containing an ionizable gas;

an electromagnetic field generator surrounding said plasma region for inductively coupling an electromagnetic field into said plasma region to ionize the gas and generate and maintain a high density, low potential plasma;

a source of deposition material including a solid target constituting a source of material to be deposited onto the substrate;

an electrical bias circuit associated with said target adapted to electrically bias said target in order to cause ions in the plasma to strike said target and sputter material from said target; and

a substrate holder for holding the substrate at a location to permit material sputtered from said target to be deposited on the substrate,

wherein said electromagnetic field generator comprises;

a source of RF electrical power;

an electrostatic shield surrounding said plasma region, said electrostatic shield is a conductive member having regions that allow passage of RF electromagnetic energy, which regions have a lower bound that is not lower than the location of a substrate held by said substrate holder; and

a coil surrounding said shield and coupled to said source of RF electrical power for converting RF power from said source into the electromagnetic field that is coupled into said plasma region; and

a voltage source adapted to apply a DC bias to said shield.

2. The apparatus of claim 1, wherein said electrical bias circuit imparts a first energy level to ions attracted to said target and wherein said apparatus further comprises an ion attractor configured to attract ions to the substrate by imparting a second energy level to ions adjacent the substrate, the second energy level being lower than the first energy level.

3. The apparatus of claim 2 wherein said electrical bias circuit imparts a first energy level using a first source of RF power coupled to said source of deposition material to induce a DC self-bias in said target.

4. The apparatus of claim 3 wherein said first source of RF power provides an RF current at a frequency greater than 0.5 MHz.

5. The apparatus of claim 4 wherein said first source of RF power comprises an RF power generator and an impedance matching network connected between said RF power generator and said target for minimizing delivery to said target of power at harmonics of the frequency of the RF current.

6. The apparatus of claim 5 wherein said source of deposition material comprises:

a metal plate to which said target is affixed; and

a cooling system thermally coupled to said target for removing heat from said target at a high rate.

7. The apparatus of claim 6 wherein said first source of RF power is capacitively coupled to said target.

8. The apparatus of claim 1, wherein said substrate holder comprises an electrostatic holder configured to apply an electrostatic force to the substrate to hold the substrate.

9. The apparatus of claim 1 wherein said target is a source of dielectric material to be deposited.

10. The apparatus of claim 1 wherein said target is a source of conductive material to be deposited.

11. An apparatus for performing physical vapor deposition of a layer on a substrate, said apparatus comprising:

a deposition chamber enclosing a plasma region for containing an ionizable gas;

an electromagnetic field generator surrounding said plasma region for inductively coupling an electromagnetic field into said plasma region to ionize the gas and generate and maintain a high density, low potential plasma;

a source of deposition material including a solid target constituting a source of material to be deposited onto the substrate;

an electrical bias circuit associated with said target to electrically bias said target in order to cause ions in the plasma to strike said target and sputter material from said target; and

a substrate holder for holding the substrate at a location to permit material sputtered from said target to be deposited on the substrate,

wherein said substrate holder comprises;

an electrostatic holder configured to apply an electrostatic force to the substrate to hold the substrate;

a gas supply configured to supply and bring gas into contact with the substrate;

a heat exchanger configured to remove heat at a high rate from the substrate; and

a voltage bias source adapted to induce a DC bias in the substrate, wherein said electromagnetic field generator comprises;

a source of RF electrical power;

an electrostatic shield surrounding said plasma region; and

a coil surrounding said shield and coupled to said source of RF electrical power for converting RF power from said source into the electromagnetic field that is coupled into said plasma region.

12. An apparatus for performing physical vapor deposition of a layer on a substrate, said apparatus comprising:

a deposition chamber enclosing a plasma region for containing an ionizable gas;

an electromagnetic field generator surrounding said plasma region for inductively coupling an electromagnetic field into said plasma region to ionize the gas and generate and maintain a high density, low potential plasma;

a source of deposition material including a solid target constituting a source of conductive material to be deposited onto the substrate;

an electrical bias circuit associated with said target to electrically bias said target in order to cause ions in the plasma to strike said target and sputter material from said target; and

a substrate holder for holding the substrate at a location to permit material sputtered from said target to be deposited on the substrate,

wherein said deposition chamber comprises a wall of dielectric material delimiting the plasma region.

13. The apparatus of claim 12 further comprising a bias shield surrounding said wall for generating a bias voltage that cooperates with a plasma in said plasma region to sputter deposited material off of said wall, wherein deposition material is deposited on the wall during a vapor deposition operation.

14. The apparatus of claim 13 further comprising a monitoring component coupled to said bias shield configured to monitor the thickness of material deposited on said wall and a voltage controller configured to control generation of the bias voltage to maintain the thickness below a predetermined value.

15. The apparatus of claim 14 wherein said monitoring component is electrically connected to said bias shield for producing an output signal representative of the electrical resistance of the layers deposited on said wall, in a direction perpendicular to said wall.

16. The apparatus of claim 15 wherein said bias shield has first and second parts that are electrically isolated from one another, and said monitoring component comprises a voltage source connected to said first part and a voltage detector connected to said second part for generating the output signal.

17. The apparatus of claim 13 wherein:

the plasma generated in said plasma region has an impedance which constitutes an output impedance of said electromagnetic field generator;

said electromagnetic field generator comprises;

a source of RF electrical power, and

an impedance matching network coupled between said source and said plasma region for maintaining efficient energy transfer from said source to the plasma generated in said plasma region, said impedance matching network having at least one electrical component having a component impedance which varies in response to variations in the impedance of the plasma; and

said apparatus further comprises a monitoring component coupled to said electrical component configured to monitor the component impedance and to control generation of the bias voltage as a function of the monitored component impedance to maintain the thickness below a predetermined value.

18. The apparatus of claim 13 wherein:

the plasma generated in said plasma region has an impedance which constitutes an output impedance of said electromagnetic field generator;

said electromagnetic field generator comprises a source of variable frequency RF electrical power having a frequency which varies in response to variations in the impedance of the plasma; and

said apparatus further comprises a voltage-frequency monitoring component coupled to said source of variable frequency RF electrical power electrical to monitor the frequency of electrical power and to control generation of the bias voltage as a function of the monitored frequency to maintain the thickness below a predetermined value.

19. A method for performing physical vapor deposition of a layer on a substrate, said method comprising:

providing a deposition chamber enclosing a plasma region and containing a solid target constituting a source of conductive material to be deposited in vapor form onto the substrate, and a substrate holder holding the substrate;

introducing an ionizable gas into the plasma region;

inductively coupling an electromagnetic RF field into the plasma region under conditions to ionize the gas and create a high density, low potential plasma;

biasing the target in order to cause ions in the plasma to strike the target and sputter material from the target; and

causing material sputtered from the target to be deposited as a layer on the substrate,

wherein the deposition chamber comprises a wall of dielectric material delimiting the plasma region.

20. The method of claim 19 further comprising attracting ions to the target by imparting a first energy level to the ions, and attracting ions to the substrate by imparting a second energy level to the ions, and wherein the first energy level is higher than the second energy level.

21. The method of claim 20 wherein said biasing the target comprises supplying RF power at a fundamental frequency to the target and minimizing power at harmonics of the fundamental frequency at the target.

22. (The method of claim 19 further comprising holding the substrate on the substrate holder by using an electrostatic force.

23. The method of claim 19 further comprising disposing a bias shield around the wall and generating a bias voltage, with the aid of the bias shield, that cooperates with a plasma in the plasma region to sputter deposited material off of the wall, wherein deposition material is deposited on the wall during a vapor deposition operation.

24. The method of claim 23 further comprising monitoring the thickness of material deposited on the wall and controlling generation of the bias voltage to maintain the thickness below a predetermined value.

25. The method of claim 24 wherein said monitoring the thickness of material deposited on the wall comprises obtaining an output signal from the bias shield representative of the electrical resistance of the layers deposited on the wall, in a direction perpendicular to the wall.

26. The method of claim 25 wherein the bias shield has first and second parts that are electrically isolated from one another, and said monitoring the thickness of material deposited on the wall comprises connecting a voltage source to the first part and a voltage detector to the second part for generating the output signal.

27. The method of claim 24 wherein:

said inductively coupling an electromagnetic RF field into the plasma region comprises;

generating RF electrical power from a power source, and coupling the RF electrical power from the source to the plasma region via an impedance matching network that maintains efficient energy transfer from the source to the plasma generated in said plasma region, said impedance matching network having at least one electrical component having a component impedance which varies in response to variations in the impedance of the plasma;

the plasma generated in the plasma region has an impedance which constitutes an output impedance of the power source; and

said monitoring the thickness of material deposited on the wall comprises determining the value of the component impedance and controlling generation of the bias voltage as a function of the component impedance value to maintain the thickness of the material deposited on the wall below a predetermined value.

28. The method of claim 24 wherein:

said inductively coupling an electromagnetic RF field into the plasma region comprises generating RF electrical power from a source of variable frequency RF electrical power having a frequency which varies in response to variations in the impedance of the plasma;

the plasma generated in the plasma region has an impedance which constitutes an output impedance of the power source; and

said monitoring the thickness of material deposited on the wall comprises determining the frequency of the electrical power and controlling generation of the bias voltage as a function of the determined frequency to maintain the thickness of the material deposited on the wall below a predetermined value.