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Semiconductor device

  • US 6,762,477 B2
  • Filed: 07/10/2002
  • Issued: 07/13/2004
  • Est. Priority Date: 03/24/2000
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • a substrate having first and second regions isolated by an element isolation region;

    a first element isolation insulating film selectively formed at a first depth in a main surface of said substrate in said first region of said substrate;

    a second element isolation insulating film selectively formed at a second depth in said main surface of said substrate in said second region of said substrate;

    an impurity introducing region disposed within said substrate only in said first region of said first and second regions of said substrate by performing an ion implantation into said substrate; and

    a third element isolation insulating film formed in said element isolation region of said substrate so as to extend from said main surface of said substrate to a point deeper than at least said first and second depths, wherein said third element isolation insulating film is formed deeper than a lifted portion of said impurity introducing region disposed within said substrate by performing said ion implantation.

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