Semiconductor device having junction-termination structure of resurf type

  • US 6,765,239 B2
  • Filed: 07/02/2002
  • Issued: 07/20/2004
  • Est. Priority Date: 07/06/2001
  • Status: Active Grant
First Claim
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1. A semiconductor device including an active region where a main semiconductor device section is disposed, and a junction-termination region located around the active region, the device comprising:

  • a semiconductor layer of a first conductivity type, disposed as a semiconductor active layer common to the active region and the junction-termination region;

    a first diffusion layer of a second conductivity type formed in a surface of the semiconductor layer, and extending from the active region into the junction-termination region;

    a second diffusion layer of the second conductivity type formed in a surface of the semiconductor layer and in contact with the first diffusion layer, the second diffusion layer extending in the junction-termination region, and having a carrier impurity concentration lower than that of the first diffusion layer;

    a first contact electrode disposed in the active region and in contact with the first diffusion layer, and electrically connected to a first main electrode of the main semiconductor device section;

    a second contact electrode disposed in the junction-termination region and in contact with the first diffusion layer, and surrounding the active region; and

    a connection electrode electrically connecting the first and second contact electrodes to each other, wherein the main semiconductor device section comprises a second main electrode extending from the active region into the junction-termination region, and, when the main semiconductor device section is turned off, a current flows in the junction-termination region from the second main electrode, through the semiconductor layer and the first diffusion layer, into the second contact electrode.

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